1N3716: Difference between revisions

From TekWiki
Jump to navigation Jump to search
No edit summary
No edit summary
Line 2: Line 2:
It is used in the [[R116]].
It is used in the [[R116]].


* http://w140.com/kurt/ge_tunnel_diodes_71.pdf
==Data==
* http://w140.com/Nucl_Instrum_Methods_TD_Induct_effects_1968.pdf
* [[Media:1N3718-GPD Optoelectronic Devices.pdf | Germanium Power Devices Datasheet for 1N3712 through 1N3721 (PDF)]]
* [http://w140.com/Nucl_Instrum_Methods_TD_Induct_effects_1968.pdf Inductance Effects on Capacitive Loading of a Tunnel Diode. J.E. Morris, ''Nuclear Instruments and Methods 66 (1968)]


{{BeginSpecs}}
{{BeginSpecs}}
{{Spec | Peak current  | 4.7 mA +/- 10% }}
{{Spec | Peak current  | 4.7 mA +/- 10% }}
{{Spec | Peak voltage  | 65 mV }}
{{Spec | Peak voltage  | 65 mV }}
{{Spec | Valley current | < 1.04 mA }}
{{Spec | Valley current | < 1.04 mA (typ. 0.6 mA) }}
{{Spec | Valley voltage | 350 mV }}
{{Spec | Valley voltage | 350 mV }}
{{Spec | Capacitance    | < 50 pF }}
{{Spec | Capacitance    | < 50 pF (typ. 25 pF) }}
{{EndSpecs}}
{{EndSpecs}}


<gallery>
<gallery>
File:1n3716 1.jpg
1n3716 1.jpg
File:1n3716 2.jpg
1n3716 2.jpg
</gallery>
</gallery>


[[Category:Tunnel diodes]]
[[Category:Tunnel diodes]]

Revision as of 06:28, 1 June 2017

The 1N3716 is a 4.7 mA / 50 pF tunnel diode. It is used in the R116.

Data

Key Specifications

Peak current 4.7 mA +/- 10%
Peak voltage 65 mV
Valley current < 1.04 mA (typ. 0.6 mA)
Valley voltage 350 mV
Capacitance < 50 pF (typ. 25 pF)