Russian tunnel diodes

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This is a collection of characteristic data for Russian tunnel diodes. Most of these are available from various surplus sellers, often on ebay.

Schema of type designations:

  • Gxxxx = Germanium, Commercial grade
  • 1xxxx = Germanium, Military grade
  • Axxxx = Gallium Arsenide, Commercial grade
  • 3xxxx = Gallium Arsenide, Military grade
  • xI1xx (like AI101) are for amplifiers
  • xI2xx (like AI201) are for generators
  • xI3xx (like AI301, GI306) are for switching circuits or general use
  • xI4xx are Backward Diodes for switching circuit and general use


Type Alt.Type Material Use Ip Vp Vpp Ip / Iv Rd Ct L f IFS IFC IR Temp
1I103A (1И103А) Ge Amplifier 1.3—1.7 mA 90 mV - 4 6 Ω T 1-2 pF
C 0.42-0.58pF
0.2 nH 10 GHz
1I103B/1I103V (1И103Б) GI103B/GI103V (ГИ103Б) Ge Amplifier 1.3—1.7 mA 90 mV - 4 8 Ω T 0.7-1.3 pF
C 0.42-0.58pF
0.2 nH 20 GHz
1I104A (1И104А) Ge Amplifier 1.3—1.7 mA 90 mV - 4 6 Ω T 0.8–1.9 pF
C 0.42-0.58pF
0.2 nH 3–15 GHz
1I304A (1И304А) GI304A (ГИ304А) Ge Switching 4.5–5.1 mA 420 mV < 20 pF +60 C
1I304B/1I304V (1И304Б) GI304B/GI304V (ГИ304Б) Ge Switching 4.8–5.4 mA 56 mV 0.4 V 8 < 20 pF 10 mA +100 C
1I305A (1И305А) Ge Switching 9.2–10.4 mA 70 mV 0.4 V 8 < 30 pF 20 mA +100 C
1I305B/1I305V (1И305Б) Ge Switching 9.6–10.8 mA 70 mV 0.4 V 8 < 30 pF 20 mA +100 C
1I307A (1И307А) GI307A (ГИ307А) Ge Switching 1.8–2.2 mA 65 mV 0.4 V 7 < 20 pF +100 C
1I308A (1И308А) GI308A (ГИ307А) Ge Switching 4.5–5.5 mA 85 mV 0.43 V 9 1.5–5 pF 0.25 nH +85 C
1I308B (1И308Б) GI308B (ГИ307Б) Ge Switching 4.5–5.5 mA 0.7–2.0 pF
1I308V (1И308В) GI308V (ГИ307В) Ge Switching 10 mA 4.0–10 pF
1I308G (1И308Г) GI308G (ГИ308Г) Ge Switching 10 mA 1.5–5.0 pF
1I308D (1И308Д) GI308D (ГИ308Д) Ge Switching 10 mA 0.8–2.0 pF
1I308E (1И308Е) GI308E (ГИ308Е) Ge Switching 20 mA 3.0–15 pF
1I308J (1И308Ж) GI308J (ГИ308Ж) Ge Switching 20 mA 1.0–4.0 pF
1I308I (1И308И) GI308I (ГИ308И) Ge Switching 50 mA 5.0–20 pF
1I308K (1И308К) GI308K (ГИ308К) Ge Switching 50 mA 2.3–8.0 pF
3I101A (3И101А) AI101A (АИ101А) GaAs Amplifier 0.75–1.25 mA 160 mV 5 24 Ω 3 pF 1.3 nH +85 C
3I101B/3I101V (3И101Б) AI101B/AI101V (АИ101Б) GaAs Amplifier 1.7–2.3 mA 160 mV 6 16 Ω < 5 pF +85 C
3I101D (3И101Д) AI101D (АИ101Д) GaAs Amplifier 1.7–2.3 mA 160 mV 5 14 Ω 2.5–10 pF 1.3 nH +85 C
3I101E (3И101Е) AI101E (АИ101Е) GaAs Amplifier 4.5–5.5 mA 180 mV 5 10 Ω 2–6 pF 1.3 nH
3I101I (3И101И) AI101I (АИ101И) GaAs Amplifier 4.5–5.5 mA 160 mV 6 7 Ω 4.5–13 pF 1.3 nH +85 C
3I201A (3И201А) AI201A (АИ201А) GaAs Oscillator 9–11 mA 200 mV 10 8 Ω 3.5 pF 1.3 nH +85 C
3I201B (3И201Б) AI201B (АИ201Б) GaAs Oscillator 9–11 mA 180 mV 10 8 Ω 2.5–6 pF 1.3 nH -
3I201V (3И201В) AI201V (3И201В) GaAs Oscillator 9–11 mA 180 mV 10 8 Ω 4.5–10 pF 1.3 nH +100 C
3I201G (3И201Г) AI201G (АИ201Г) GaAs Oscillator 16–22 mA 210 mV 10 5 Ω < 4 pF 1.3 nH +85 C
3I201D (3И201Д) AI201D (АИ201Д) GaAs Oscillator 16–22 mA 200 mV 10 5 Ω < 4 pF 1.3 nH +85 C
3I201E (3И201Е) AI201D (АИ201Е) GaAs Oscillator 16–22 mA 200 mV 10 4 Ω 5–12 pF 1.3 nH +85 C
3I201SH/3I201J (3И201Ж) GaAs Oscillator 45–55 mA 260 mV 10 2.5 Ω < 15 pF < 1.3 nH +100 C
3I201K (3И201К) AI201K (АИ201К) GaAs Oscillator 90–110 mA 330 mV 10 2.2 Ω < 15 pF 1.3 nH +85 C
3I201L (3И201Л) AI201L (АИ201Л) GaAs Oscillator 90–110 mA 330 mV 10 2.2 Ω 10–40 pF 1.3 nH +85 C
AI301A (АИ301А) GaAs Switching 2 mA 180 mV 0.65 V 8 < 12 pF < 1.5 nH - +70 C
AI301B/AI301V (АИ301Б) GaAs Switching 5 mA 180 mV 0.85–1.15 V 8 < 25 pF < 1.5 nH - +70 C
AI301G (АИ301Г) GaAs Switching 10 mA 180 mV 0.8 V 8 < 50 pF < 1.5 nH - +70 C
3I306E (3И306Е) GaAs Switching 1.8–2.2 mA 170 mV 0.85 V 8 4–12 pF 2.4 mA 1.8 mA 4 mA +100 C
3I306G (3И306Г) GaAs Switching 2 mA 170 mV 0.85 V 8 < 8 pF 0.8 mA 0.8 mA 4 mA +100 C
3I306SH/3I306J (3И306Ж) GaAs Switching 5 mA 170 mV 0.85 V 8 < 15 pF 2 mA 2 mA 20 mA +100 C
3I306K (3И306К) GaAs Switching 4.5–5.5 mA 170 mV 0.85 V 8 8–25 pF 6 mA 4.5 mA 10 mA +100 C
3I306L (3И306Л) GaAs Switching 9–11 mA 170 mV 0.85 V 8 < 12 pF 4 mA 4 mA 20 mA +100 C
3I306M (3И306М) GaAs Switching 9–11 mA 170 mV 0.85 V 8 < 30 pF 4 mA 4 mA 20 mA +100 C
3I306N (3И306Н) GaAs Switching 9–11 mA 170 mV 0.85 V 8 15–50 pF 12 mA 9 mA 20 mA +100 C
3I306R (3И306Р) GaAs Switching 4.5–5.5 mA 170 mV 0.85 V 8 4–25 pF 6 mA 4.5 mA 10 mA +100 C


Type Alt. Type Material Use IF IR VF VR Rd CT Temp
1I401A (1И401А) GI401A (ГИ401А) Ge Back Diode 0.3 mA 4 mA 330 mV @ 0.1 mA 90 mV @ 1 mA 1.2–1.5 pF -55…+70 C
1I404B/1I404V (1И404Б) GI404B/GI404V (ГИ404Б) Ge Back Diode 0.8 mA 4 mA 350 mV @ 0.5 mA 75–105 mV @ 4 mA 1–2 pF
3I402B/3I402V (3И402Б) GaAs Back Diode 0.05 mA 2 mA 600 mV @ 0.4 mA 250 mV @ 4 mA 14 Ω @ 100 mA < 6 pF
3I402G (3И402Г) AI402G (АИ402Г) GaAs Back Diode 0.05 mA 2 mA 600 mV @ 0.4 mA 250 mV @ 4 mA 1.5–3.5 pF
3I402E (3И402Г) AI402E (АИ402Е) GaAs Back Diode
3I402I (3И402И) AI402I (АИ402И) GaAs Back Diode 0.05 mA 4 mA 600 mV @ 0.4 mA 250 mV @ 4 mA 14 Ω @ 100 mA < 10 pF