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Russian tunnel diodes: Difference between revisions

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Russian tunnel diodes (view source)

Revision as of 13:19, 4 November 2018

72 bytes added ,  4 November 2018
Adding max. DC current on 2nd rise in IV curve for GI308 types
(adding inductance fir GI308 types)
(Adding max. DC current on 2nd rise in IV curve for GI308 types)
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|'''1I307A (1И307А)'''  || '''GI307A (ГИ307А)''' || Ge  || Switching  || 1.8–2.2 mA  ||  65 mV    || 0.4 V  || 7 ||        || < 20 pF    ||        ||  ||  ||  ||        || +100°C  || [http://asest.com/189-gi307a Data Sheet (RU)]
|'''1I307A (1И307А)'''  || '''GI307A (ГИ307А)''' || Ge  || Switching  || 1.8–2.2 mA  ||  65 mV    || 0.4 V  || 7 ||        || < 20 pF    ||        ||  ||  ||  ||        || +100°C  || [http://asest.com/189-gi307a Data Sheet (RU)]
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|-   
|'''1I308A (1И308А)'''  || '''GI308A (ГИ308А)''' || Ge  || Switching  || 4.5–5.5 mA  ||  70-100 mV || 0.43 V || 9 ||        || 1.5–5 pF  || 0.25 nH ||  ||   ||   ||        || +85°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
|'''1I308A (1И308А)'''  || '''GI308A (ГИ308А)''' || Ge  || Switching  || 4.5–5.5 mA  ||  70-100 mV || 0.43 V || 9 ||        || 1.5–5 pF  || 0.25 nH ||  ||12mA@1µs@1E5Hz 20mA@0.1µs@1E5Hz 30mA@10ns@1E5Hz||6 mA||        || +85°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
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|'''1I308B (1И308Б)'''  || '''GI308B (ГИ308Б)''' || Ge  || Switching  || 4.5–5.5 mA  ||  70-110 mV ||        || 5 ||        || 0.7–2.0 pF ||0.2-0.35 nH||  ||   ||   ||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
|'''1I308B (1И308Б)'''  || '''GI308B (ГИ308Б)''' || Ge  || Switching  || 4.5–5.5 mA  ||  70-110 mV ||        || 5 ||        || 0.7–2.0 pF ||0.2-0.35 nH||  ||5mA@1µs@1E5 Hz||4 mA||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
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|'''1I308V (1И308В)'''  || '''GI308V (ГИ308В)''' || Ge  || Switching  || 9.0-11 mA    ||  60-110 mV ||        || 5 ||        || 4.0–10 pF  ||0.2-0.35 nH||  ||  ||   ||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
|'''1I308V (1И308В)'''  || '''GI308V (ГИ308В)''' || Ge  || Switching  || 9.0-11 mA    ||  60-110 mV ||        || 5 ||        || 4.0–10 pF  ||0.2-0.35 nH||  ||  ||20 mA||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
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|'''1I308G (1И308Г)'''  || '''GI308G (ГИ308Г)''' || Ge  || Switching  || 9.0-11 mA    ||  60-120 mV ||        || 5 ||        || 1.5–5.0 pF ||0.2-0.35 nH||  ||  ||   ||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
|'''1I308G (1И308Г)'''  || '''GI308G (ГИ308Г)''' || Ge  || Switching  || 9.0-11 mA    ||  60-120 mV ||        || 5 ||        || 1.5–5.0 pF ||0.2-0.35 nH||  ||  ||15 mA||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
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|'''1I308D (1И308Д)'''  || '''GI308D (ГИ308Д)''' || Ge  || Switching  || 9.0-11 mA    ||  70-130 mV ||        || 5 ||        || 0.8–2.0 pF ||0.2-0.35 nH||  ||  ||   ||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
|'''1I308D (1И308Д)'''  || '''GI308D (ГИ308Д)''' || Ge  || Switching  || 9.0-11 mA    ||  70-130 mV ||        || 5 ||        || 0.8–2.0 pF ||0.2-0.35 nH||  ||  ||6 mA||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
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|'''1I308E (1И308Е)'''  || '''GI308E (ГИ308Е)''' || Ge  || Switching  || 18-22 mA    ||  80-140 mV ||        || 5 ||        || 3.0–15 pF  ||0.2-0.35 nH||  ||  ||   ||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
|'''1I308E (1И308Е)'''  || '''GI308E (ГИ308Е)''' || Ge  || Switching  || 18-22 mA    ||  80-140 mV ||        || 5 ||        || 3.0–15 pF  ||0.2-0.35 nH||  ||  ||20 mA||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
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|'''1I308J (1И308Ж)'''  || '''GI308J (ГИ308Ж)''' || Ge  || Switching  || 18-22 mA    ||  85-160 mV ||        || 5 ||        || 1.0–4.0 pF ||0.2-0.35 nH||  ||  ||   ||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
|'''1I308J (1И308Ж)'''  || '''GI308J (ГИ308Ж)''' || Ge  || Switching  || 18-22 mA    ||  85-160 mV ||        || 5 ||        || 1.0–4.0 pF ||0.2-0.35 nH||  ||  ||8 mA||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
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|'''1I308I (1И308И)'''  || '''GI308I (ГИ308И)''' || Ge  || Switching  || 45-55 mA    || 100-150 mV ||        || 5 ||        || 5.0–20 pF  ||0.2-0.35 nH||  ||  ||   ||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
|'''1I308I (1И308И)'''  || '''GI308I (ГИ308И)''' || Ge  || Switching  || 45-55 mA    || 100-150 mV ||        || 5 ||        || 5.0–20 pF  ||0.2-0.35 nH||  ||  ||40 mA||    || +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
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|'''1I308K (1И308К)'''  || '''GI308K (ГИ308К)''' || Ge  || Switching  || 45-55 mA    || 100-180 mV ||        || 5 ||        || 2.3–8.0 pF ||0.2-0.35 nH||  ||  ||   ||    ||  +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
|'''1I308K (1И308К)'''  || '''GI308K (ГИ308К)''' || Ge  || Switching  || 45-55 mA    || 100-180 mV ||        || 5 ||        || 2.3–8.0 pF ||0.2-0.35 nH||  ||  ||20 mA||    ||  +70°C || [http://asest.com/190-1i308a-1i308b-1i308v-1i308g-1i308d-1i308e-1i308zh-1i308i-1i308k Data Sheet (RU)]
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|'''3I101A (3И101А)'''  || '''AI101A (АИ101А)''' || GaAs || Amplifier  || 0.75–1.25 mA || 160 mV    ||        ||  5 || 24 Ω  || 3 pF      || 1.3 nH  ||  ||  ||  ||    ||  +85°C || [[Media:3i101_ai101.pdf|Data sheet (RU)]]
|'''3I101A (3И101А)'''  || '''AI101A (АИ101А)''' || GaAs || Amplifier  || 0.75–1.25 mA || 160 mV    ||        ||  5 || 24 Ω  || 3 pF      || 1.3 nH  ||  ||  ||  ||    ||  +85°C || [[Media:3i101_ai101.pdf|Data sheet (RU)]]
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