User:Peter/Russian tunnel diodes: Difference between revisions

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(started to collect Russian tunnel diode specs for cross referencing as possible alternatives to obsolete parts)
 
(add'l types)
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{| border="1" cellpadding="2" cellspacing="0"
{| border="1" cellpadding="2" cellspacing="0"
!Type
!Type
!Alt.Type
!Material
!Material
!Use
!Use
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!C<sub>t</sub>
!C<sub>t</sub>
!L
!L
!f
!I<sub>FS</sub>
!I<sub>FS</sub>
!I<sub>FC</sub>
!I<sub>FC</sub>
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!Temp
!Temp
|-
|-
|'''1I103B/1I103V (1И103Б)'''<br />'''GI103B/GI103V (ГИ103Б)'''|| Ge  || Amplifier  || 1.3—1.7 mA  ||  90 mV ||  -    || 4 || 8 Ω ||  T 0.7-1.3 pF<br />C 0.42-0.58pF || 0.2 nH  || ||  ||  ||
|'''1I103A (1И103А) ||  || Ge  || Amplifier  || 1.3—1.7 mA  ||  90 mV ||  -    || 4 || 6 Ω ||  T 1-2 pF<br />C 0.42-0.58pF || 0.2 nH  || 10 GHz ||  ||  ||  ||
|-
|-
|'''1I304B/1I304V (1И304Б)'''|| Ge  || Switching || 4.8–5.4 mA ||  56 mV || 0.4 V  || 8 ||  || < 20 pF || - ||  ||   || 10 mA || +100 C
|'''1I103B/1I103V (1И103Б)''' || '''GI103B/GI103V (ГИ103Б)'''|| Ge  || Amplifier || 1.3—1.7 mA ||  90 mV || -    || 4 || 8 Ω ||  T 0.7-1.3 pF<br />C 0.42-0.58pF || 0.2 nH  || 20 GHz ||  || ||  ||
|-
|-
|'''1I305B/1I305V (1И305Б)'''|| Ge  || Switching || 9.6–10.8 mA ||  70 mV || 0.4 V || 8 || || < 30 pF || - ||   ||   ||  20 mA || +100 C
|'''1I104A (1И104А) ||  || Ge  || Amplifier || 1.3—1.7 mA ||  90 mV ||  -    || 4 || 6 Ω || T 0.8–1.9 pF<br />C 0.42-0.58pF || 0.2 nH  || 3–15 GHz || ||  || ||
|-
|-
|'''1I308A (1И308А)'''       || Ge   || Switching || 4.5–5.5 mA || 85 mV || 0.43 V || 9 || || 1.5–5 pF  || 0.25 nH ||       ||       ||        || +85 C
|'''1I304A (1И304А) || GI304A (ГИ304А)'''   || Ge || Switching   || 4.5–5.1 mA || 420 mV ||       ||   ||   || < 20 pF || ||   ||   ||   ||        || +60 C  
|-
|-
|'''3I201L (3И201Л)'''       || GaAs || Oscillator || 20 mA       || 210 mV ||  -    ||10 ||  || < 4 pF || < 1.5 nH ||  ||  ||  20 mA || +100 C
|'''1I304B/1I304V (1И304Б) || GI304B/GI304V (ГИ304Б)'''|| Ge  || Switching  || 4.8–5.4 mA || 56 mV || 0.4 V || 8 ||  || < 20 pF || ||  ||  ||  ||  10 mA || +100 C
|-
|-
|'''3I306E (3И306Е)'''       || GaAs || Switching  || 1.8–2.2 mA || 170 mV || 0.85 V || 8 ||  || 4–12 pF  || - || 2.4 mA || 1.8 mA ||  4 mA  || +100 C
|'''1I305A (1И305А)'''   ||   || Ge  || Switching  || 9.2–10.4 mA || 70 mV || 0.4 V || 8 ||  || < 30 pF || || ||   ||   ||  20 mA  || +100 C
|-
|-
|'''3I306G (3И306Г)'''       || GaAs || Switching  || 2 mA       || 170 mV || 0.85 V || 8 ||  || < 8 pF   || - || 0.8 mA || 0.8 mA  ||  4 mA  || +100 C
|'''1I305B/1I305V (1И305Б)''' || || Ge  || Switching  || 9.6–10.8 mA || 70 mV || 0.4 V || 8 ||  || < 30 pF || || ||  ||   ||  20 mA  || +100 C
|-
|-
|'''3I306J (3И306..)'''     || GaAs || Switching  || 5 mA       || 170 mV || 0.85 V || 8 ||  || < 15 pF  || - || 2 mA  || 2 mA  || 20 mA  || +100 C
|'''1I307A (1И307А) || GI307A (ГИ307А)'''|| Ge  || Switching  || 1.8–2.2 mA || 65 mV || 0.4 V || 7 ||  || < 20 pF  || ||    ||   ||       ||         || +100 C
|-
|-
|'''3I306K (3И306К)'''       || GaAs || Switching  || 4.5–5.5 mA  || 170 mV || 0.85 V || 8 ||  || 8–25 pF  || - || 6 mA  || 4.5 mA  || 10 mA  || +100 C
|'''1I308A (1И308А)'''       ||     || Ge  || Switching  || 4.5–5.5 mA  || 85 mV || 0.43 V || 9 ||  || 1.5–5 pF  || 0.25 nH ||  ||     ||       ||         || +85 C
|-
|-
|'''3I306L (3И306Л)'''       || GaAs || Switching || 9–11 mA     || 170 mV || 0.85 V || 8 || || < 12 pF  || - || 4 mA  || 4 mA  || 20 mA  || +100 C
|'''3I101A (3И101А)'''       ||  '''AI101A (АИ101А)'''    || GaAs || Amplifier || 0.75–1.25 mA || 160 mV || || 5 || 24 Ω || 3 pF  || 1.3 nH  ||    ||   ||       ||         || +85 C
|-
|-
|'''3I306M (3И306М)'''       || GaAs || Switching || 9–11 mA     || 170 mV || 0.85 V || 8 || || < 30 pF  || - ||  4 mA  || 4 mA ||  20 mA || +100 C
|'''3I101B/3I101V (3И101Б)''' || '''AI101B/AI101V (АИ101Б)'''|| GaAs || Amplifier  || 1.7–2.3 mA || 160 mV ||        || 6 || 16 Ω || < 5 pF ||  ||  ||    ||        ||        || +85 C
|-  
|-
|'''3I306N (3И306Н)'''       || GaAs || Switching  || 9–11 mA    || 170 mV || 0.85 V || 8 || || 15–50 pF  || - ||  12 mA ||  9 mA  ||  20 mA || +100 C
|'''3I101D (3И101Д)'''  ||  '''AI101D (АИ101Д)'''    || GaAs || Amplifier || 1.7–2.3 mA || 160 mV || || 5 || 14 Ω || 2.5–10 pF  || 1.3 nH ||  ||      ||        ||        || +85 C
|-  
|-
|'''3I306R (3И306Р)'''      || GaAs || Switching || 4.5–5.5 mA || 170 mV || 0.85 V || 8 || || 4–25 pF  || - ||  6 mA ||  4.5 mA ||  10 mA  || +100 C
|'''3I101E (3И101Е)'''  ||  '''AI101E (АИ101Е)'''    || GaAs || Amplifier || 4.5–5.5 mA || 180 mV ||  || 5 || 10 Ω || 2–6 pF  || 1.3 nH ||  ||    ||        ||        ||
|-
|'''3I101I (3И101И)''' || '''AI101I (АИ101И)'''      || GaAs || Amplifier   || 4.5–5.5 mA || 160 mV ||        || 6 || 7 Ω || 4.5–13 pF ||  1.3 nH    ||    || ||        ||        || +85 C
|-
| || '''AI201A (АИ201А)'''     || GaAs || Oscillator || 9–11 mA    || 200 mV ||       ||10 || 8 Ω || 3.5 pF || 1.3 nH  ||    ||  ||        ||        || +85 C
|-
| ||'''AI201B/AI201V (АИ201Б)'''|| GaAs || Oscillator || 9–11 mA    || 180 mV ||        ||10 || 8 Ω || 2.5–6 pF || 1.3 nH  ||  ||  ||       ||         || +100 C
|-
|'''3I201SH/3I201J (3И201Ж)''' || || GaAs || Oscillator || 50 mA      || 260 mV ||  -    ||10 ||  || < 8 pF || < 1.3 nH || || ||  ||      || +100 C
|-
| ||'''AI201G (АИ201Г)'''      || GaAs || Oscillator ||  20 mA     || 210 mV ||        ||10 || 5 Ω || 4 pF  || 1.3 nH  ||  ||  ||        ||        || +85 C
|-
|'''3I201L (3И201Л)''' ||    || GaAs || Oscillator || 20 mA       || 210 mV || -    ||10 ||  || < 4 pF || < 1.5 nH ||  || ||  ||  20 mA || +100 C
|-
| || '''AI201L (АИ201Л)'''      || GaAs || Oscillator || 100 mA    || 330 mV ||        ||10 || 2.2 Ω || 10–50 pF  || 1.3 nH ||  ||      ||        ||  || +85 C
|-
| || '''AI301A (АИ301А)'''      || GaAs || Switching  || 2 mA       || 180 mV || 0.65 V || 8 || || < 12 pF  ||  < 1.5 nH  ||  ||  ||  ||  - || +70 C
|-
| || '''AI301B/AI301V (АИ301Б)''' || GaAs || Switching || 5 mA       || 180 mV || 0.85–1.15 V || 8 || || < 25 pF  ||  < 1.5 nH || ||  ||   ||  - ||  +70 C
|-
|-
|'''AI201A (АИ201А)'''      || GaAs || Oscillator || 9–11 mA     || 200 mV ||       ||10 || 8 Ω || 3.5 pF || 1.3 nH  ||     ||       ||         || +85 C
| || '''AI301G (АИ301Г)'''      ||GaAs || Switching  || 10 mA       || 180 mV || 0.8 V  || 8 || || < 50 pF || < 1.5 nH  || ||   ||   || - ||  +70 C
|-
|-
|'''AI201G (АИ201Г)'''       || GaAs || Oscillator ||  20 mA      || 210 mV ||       ||10 || 5 Ω || 4 pF   || 1.3 nH ||     ||       ||         || +85 C
|'''3I306E (3И306Е)''' ||      || GaAs || Switching  || 1.8–2.2 mA || 170 mV || 0.85 V || 8 || || 4–12 pF ||  ||  || 2.4 mA || 1.8 mA || 4 mA  || +100 C
|-
|-
|'''AI201L (АИ201Л)'''       || GaAs || Oscillator ||             ||       ||       ||10 || || 10–40 pF  ||   ||       ||       ||         ||
|'''3I306G (3И306Г)''' ||      || GaAs || Switching  || 2 mA        || 170 mV || 0.85 V || 8 || || < 8 pF   || || || 0.8 mA || 0.8 mA  || 4 mA  || +100 C
|-
|-
|'''AI301A (АИ301А)'''       || GaAs || Switching  || 2 mA        || 180 mV || 0.65 V || 8 || || < 12 pF  ||  < 1.5 nH ||   ||   ||  - || +70 C
|'''3I306SH/3I306J (3И306Ж)''' ||    || GaAs || Switching  || 5 mA        || 170 mV || 0.85 V || 8 || || < 15 pF  ||  || || 2 mA  || 2 mA  ||  20 mA  || +100 C
|-
|-
|'''AI301B/AI301V (АИ301Б)'''|| GaAs || Switching  || 5 mA       || 180 mV || 0.85–1.15 V || 8 || || < 25 pF  || < 1.5 nH ||  ||   ||   - ||  +70 C
|'''3I306K (3И306К)''' ||    || GaAs || Switching  || 4.5–5.5 mA || 170 mV || 0.85 V || 8 || || 8–25 pF  ||  ||  || 6 mA  || 4.5 mA  ||  10 mA  || +100 C
|-
|-
|'''AI301G (АИ301Г)'''       || GaAs || Switching  || 10 mA       || 180 mV || 0.8 V || 8 || || < 50 pF  || < 1.5 nH ||   ||   ||  - ||  +70 C
|'''3I306L (3И306Л)''' ||    || GaAs || Switching  || 9–11 mA     || 170 mV || 0.85 V || 8 || || < 12 pF  ||  ||   || 4 mA  || 4 mA ||  20 mA  || +100 C
|-
|-
|'''3I306M (3И306М)''' ||      || GaAs || Switching  || 9–11 mA    || 170 mV || 0.85 V || 8 || || < 30 pF  ||  ||  ||  4 mA  ||  4 mA ||  20 mA  || +100 C
|-
|'''3I306N (3И306Н)'''  ||    || GaAs || Switching  || 9–11 mA    || 170 mV || 0.85 V || 8 || || 15–50 pF  ||  ||  ||  12 mA ||  9 mA  ||  20 mA  || +100 C
|-
|'''3I306R (3И306Р)'''  ||    || GaAs || Switching  || 4.5–5.5 mA  || 170 mV || 0.85 V || 8 || || 4–25 pF  ||  ||  ||  6 mA ||  4.5 mA  ||  10 mA  || +100 C
|}
|}


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{| border="1" cellpadding="2" cellspacing="0"
{| border="1" cellpadding="2" cellspacing="0"
!Type
!Type
!Alt. Type
!Material
!Material
!Use
!Use
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!V<sub>F</sub>
!V<sub>F</sub>
!V<sub>R</sub>
!V<sub>R</sub>
!R<sub>d</sub>
!C<sub>T</sub>
!C<sub>T</sub>
!Temp
!Temp
|-
|-
|'''AI402I (АИ402И)''' || GaAs || Back Diode ||        ||     ||                 ||             ||           ||  
|'''1I401A (1И401А)''' || '''GI401A (ГИ401А)'''
| Ge  || Back Diode || 0.3 mA  || 4 mA || 330 mV @ 0.1 mA || 90 mV @ 1 mA  ||                || 1.2–1.5 pF  || -55…+70 C
|-
|'''1I404B/1I404V (1И404Б)''' || '''GI404B/GI404V (ГИ404Б)'''
| Ge  || Back Diode || 0.8 mA  || 4 mA || 350 mV @ 0.5 mA || 75–105 mV @ 4 mA  ||                || 1–2 pF  ||
|-
|'''3I402B/3I402V (3И402Б)''' ||
| GaAs || Back Diode || 0.05 mA || 2 mA || 600 mV @ 0.4 mA || 250 mV @ 4 mA || 14 Ω @ 100 mA || < 6 pF      ||
|-
|'''3I402G (3И402Г)''' ||  '''AI402G (АИ402Г)'''        
| GaAs || Back Diode || 0.05 mA || 2 mA || 600 mV @ 0.4 mA || 250 mV @ 4 mA ||               || 1.5–3.5 pF ||  
|-
|-
|'''GI401A (ГИ401А)''' || Ge  || Back Diode || 0.3 mA || 4 mA || 330 mV @ 0.1 mA || 90 mV @ 1 mA  || 1.2–1.5 pF || -55…+70 C
|'''3I402E (3И402Г)''' || '''AI402E (АИ402Е)'''       
| GaAs || Back Diode ||    ||    ||        ||        ||                ||      ||
|-
|'''3I402I (3И402И)''' ||  '''AI402I (АИ402И)'''
| GaAs || Back Diode || 0.05 mA || 4 mA || 600 mV @ 0.4 mA || 250 mV @ 4 mA || 14 Ω @ 100 mA  || < 10 pF   ||  
|-
|-
|}
|}
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:Constant Power Dissipation 4mW  
:Constant Power Dissipation 4mW  
:Pulse Power Dissipation 10mW
:Pulse Power Dissipation 10mW
'''1I103A'''
:Frequency, max                                    10 GHz
:Peak Point Current                                1.3...1.7 mA
:Peak Point Voltage                                90 mV
:Peak to Valley Current Ratio              4
:Noise Ratio                                            1...1.5
:Loss Resistance                                    6 Ohm
:Negative Differential Conductivity      17...10 MOhm
:Terminal Capacitance                            1...2 pF
:Case Capacitance                                  0.42...0.58 pF
:Inductance                                              0.2 nH
:Forward Current, DC                              1.5 mA
:Reverse Current, DC                            1.5 mA
:Forward Voltage, DC                              400 mV
:Reverse Voltage, DC                              20 mV
:Constant Power Dissipation                    5 mW
:Pulse Power Dissipation                          200 mW
'''GI304A'''
:Peak current :
:T = +25 ° C, 4.5 ... 5.1 mA
:T = -40 ° C, 3.6 ... 5.61 mA
:T = 60 ° C,  4.05 ... 5.61 mA
: Voltage solution for / = 5 mA
:T = +25 ° C, > 420 mV
:T = -40 ° C, < 525 mV
:T = +60 ° C, > 336 mV
:Voltage peak maximum 65 mV
:Total capacity at the minimum of the current-voltage characteristics at f = 5 ... 20 MHz < 20 pF
:''Limit operating data''
:Constant forward and reverse currents : 1I304A , 1I304B : GI304A : T = -40 ... +20 ° C 10 mA, T = +60 ° C 7.5 mA
: Ambient temperature GI304A -40 ... +60 ° C.
'''1I404A'''
:Frequency Range                                  3 - 30GHz
:Peak Point Current                                0.14 - 0.29mA
:Peak Point Voltage                                90mV
:Loss Resistance                                    9 Ohm
:Valley Point Terminal Capacitance        0.5 - 1pF
:Case Capacitance                                  0.45...0.55pF
:Inductance                                              0.2nH
:Forward Current, DC                              0.4mA
:Reverse Current, DC                              2mA
:Forward Voltage, DC at IF =0.5mA        350mV
:Forward Voltage, DC at IF =0.3mA        360 - 470mV
:Reverse Voltage, DC at IR=3mA          75 - 105mV
:Constant Power Dissipation                    2mW
:Pulse Power Dissipation                          8mW
'''1I404B/V'''
:Frequency Range                                  3 - 30GHz
:Peak Point Current                                0.14 - 0.29mA
:Peak Point Voltage                                90mV
:Loss Resistance                                    7 Ohm
:Valley Point Terminal Capacitanc        1.0 - 2.0pF
:Case Capacitance                                  0.45...0.55pF
:Inductance                                              0.2nH
:Forward Current, DC                              0.8mA
:Reverse Current, DC                            4mA
:Forward Voltage, DC at IF =0.5mA        350mV
:Forward Voltage, DC at IF =0.3mA        360 - 470mV
:Reverse Voltage, DC at IR=3mA          75 - 105mV
:Constant Power Dissipation                    5mW
:Pulse Power Dissipation                          50mW
'''1I104A'''
:Frequency Range                                  3...15GHz
:Cutoff Frequency                                  11...25GHz
:Peak Point Current                              1.3...1.7mA
:Peak Point Voltage                                90mV
:Peak to Valley Current Ratio              4
:Loss Resistance                                    6 Ohm
:Valley Point Terminal Capacitance      0.8 - 1.9pF
:Case Capacitance                                  0.42...0.58pF
:Inductance                                              0.1nH
:Forward Current, DC                            0.51mA
:Reverse Current, DC                            1.5mA
:Forward Voltage, DC                            400mV
:Reverse Voltage, DC                            20mV
:Constant Power Dissipation                  5mW
:Pulse Power Dissipation                        200mW

Revision as of 07:39, 25 June 2014

Type Alt.Type Material Use Ip Vp Vpp Ip / Iv Rd Ct L f IFS IFC IR Temp
1I103A (1И103А) Ge Amplifier 1.3—1.7 mA 90 mV - 4 6 Ω T 1-2 pF
C 0.42-0.58pF		 0.2 nH 10 GHz
1I103B/1I103V (1И103Б) GI103B/GI103V (ГИ103Б) Ge Amplifier 1.3—1.7 mA 90 mV - 4 8 Ω T 0.7-1.3 pF
C 0.42-0.58pF		 0.2 nH 20 GHz
1I104A (1И104А) Ge Amplifier 1.3—1.7 mA 90 mV - 4 6 Ω T 0.8–1.9 pF
C 0.42-0.58pF		 0.2 nH 3–15 GHz
1I304A (1И304А) GI304A (ГИ304А) Ge Switching 4.5–5.1 mA 420 mV < 20 pF +60 C
1I304B/1I304V (1И304Б) GI304B/GI304V (ГИ304Б) Ge Switching 4.8–5.4 mA 56 mV 0.4 V 8 < 20 pF 10 mA +100 C
1I305A (1И305А) Ge Switching 9.2–10.4 mA 70 mV 0.4 V 8 < 30 pF 20 mA +100 C
1I305B/1I305V (1И305Б) Ge Switching 9.6–10.8 mA 70 mV 0.4 V 8 < 30 pF 20 mA +100 C
1I307A (1И307А) GI307A (ГИ307А) Ge Switching 1.8–2.2 mA 65 mV 0.4 V 7 < 20 pF +100 C
1I308A (1И308А) Ge Switching 4.5–5.5 mA 85 mV 0.43 V 9 1.5–5 pF 0.25 nH +85 C
3I101A (3И101А) AI101A (АИ101А) GaAs Amplifier 0.75–1.25 mA 160 mV 5 24 Ω 3 pF 1.3 nH +85 C
3I101B/3I101V (3И101Б) AI101B/AI101V (АИ101Б) GaAs Amplifier 1.7–2.3 mA 160 mV 6 16 Ω < 5 pF +85 C
3I101D (3И101Д) AI101D (АИ101Д) GaAs Amplifier 1.7–2.3 mA 160 mV 5 14 Ω 2.5–10 pF 1.3 nH +85 C
3I101E (3И101Е) AI101E (АИ101Е) GaAs Amplifier 4.5–5.5 mA 180 mV 5 10 Ω 2–6 pF 1.3 nH
3I101I (3И101И) AI101I (АИ101И) GaAs Amplifier 4.5–5.5 mA 160 mV 6 7 Ω 4.5–13 pF 1.3 nH +85 C
AI201A (АИ201А) GaAs Oscillator 9–11 mA 200 mV 10 8 Ω 3.5 pF 1.3 nH +85 C
AI201B/AI201V (АИ201Б) GaAs Oscillator 9–11 mA 180 mV 10 8 Ω 2.5–6 pF 1.3 nH +100 C
3I201SH/3I201J (3И201Ж) GaAs Oscillator 50 mA 260 mV - 10 < 8 pF < 1.3 nH +100 C
AI201G (АИ201Г) GaAs Oscillator 20 mA 210 mV 10 5 Ω 4 pF 1.3 nH +85 C
3I201L (3И201Л) GaAs Oscillator 20 mA 210 mV - 10 < 4 pF < 1.5 nH 20 mA +100 C
AI201L (АИ201Л) GaAs Oscillator 100 mA 330 mV 10 2.2 Ω 10–50 pF 1.3 nH +85 C
AI301A (АИ301А) GaAs Switching 2 mA 180 mV 0.65 V 8 < 12 pF < 1.5 nH - +70 C
AI301B/AI301V (АИ301Б) GaAs Switching 5 mA 180 mV 0.85–1.15 V 8 < 25 pF < 1.5 nH - +70 C
AI301G (АИ301Г) GaAs Switching 10 mA 180 mV 0.8 V 8 < 50 pF < 1.5 nH - +70 C
3I306E (3И306Е) GaAs Switching 1.8–2.2 mA 170 mV 0.85 V 8 4–12 pF 2.4 mA 1.8 mA 4 mA +100 C
3I306G (3И306Г) GaAs Switching 2 mA 170 mV 0.85 V 8 < 8 pF 0.8 mA 0.8 mA 4 mA +100 C
3I306SH/3I306J (3И306Ж) GaAs Switching 5 mA 170 mV 0.85 V 8 < 15 pF 2 mA 2 mA 20 mA +100 C
3I306K (3И306К) GaAs Switching 4.5–5.5 mA 170 mV 0.85 V 8 8–25 pF 6 mA 4.5 mA 10 mA +100 C
3I306L (3И306Л) GaAs Switching 9–11 mA 170 mV 0.85 V 8 < 12 pF 4 mA 4 mA 20 mA +100 C
3I306M (3И306М) GaAs Switching 9–11 mA 170 mV 0.85 V 8 < 30 pF 4 mA 4 mA 20 mA +100 C
3I306N (3И306Н) GaAs Switching 9–11 mA 170 mV 0.85 V 8 15–50 pF 12 mA 9 mA 20 mA +100 C
3I306R (3И306Р) GaAs Switching 4.5–5.5 mA 170 mV 0.85 V 8 4–25 pF 6 mA 4.5 mA 10 mA +100 C


Type Alt. Type Material Use IF IR VF VR Rd CT Temp
1I401A (1И401А) GI401A (ГИ401А) Ge Back Diode 0.3 mA 4 mA 330 mV @ 0.1 mA 90 mV @ 1 mA 1.2–1.5 pF -55…+70 C
1I404B/1I404V (1И404Б) GI404B/GI404V (ГИ404Б) Ge Back Diode 0.8 mA 4 mA 350 mV @ 0.5 mA 75–105 mV @ 4 mA 1–2 pF
3I402B/3I402V (3И402Б) GaAs Back Diode 0.05 mA 2 mA 600 mV @ 0.4 mA 250 mV @ 4 mA 14 Ω @ 100 mA < 6 pF
3I402G (3И402Г) AI402G (АИ402Г) GaAs Back Diode 0.05 mA 2 mA 600 mV @ 0.4 mA 250 mV @ 4 mA 1.5–3.5 pF
3I402E (3И402Г) AI402E (АИ402Е) GaAs Back Diode
3I402I (3И402И) AI402I (АИ402И) GaAs Back Diode 0.05 mA 4 mA 600 mV @ 0.4 mA 250 mV @ 4 mA 14 Ω @ 100 mA < 10 pF


  • "G", "1" = Germanium
  • "A", "3" = Gallium Arsenide
  • "1", "3" = Military grade
  • "A", "G" = Commercial grade
  • xI1xx (like AI101) are for amplifiers
  • xI2xx (like AI201) are for generators
  • xI3xx (like AI301, GI306) are for switching circuits or general use
  • xI4xx are Backward Diodes for switching circuit and general use


1I305B (1И305Б) GaAs Tunnel Diode for switching applications, metal-ceramic case

Peak point current (Ip): 9.6 - 10.8 mA
Peak point voltage (Vp): 70 mV
Projected peak-point voltage (Vpp): 0.4 V
Peak to valley current ratio (Ip/Iv): 8
Valley point terminal capacitance (Ct): < 30 pF
Reverse current (IR): 20 mA
Temperature range: < +100 C

3I201L (3И201Г) GaAs Tunnel Diode for switching applications, metal-ceramic case

Peak point current (Ip): 20 mA
Peak point voltage (Vp): 210 mV
Peak to valley current ratio (Ip/Iv): 10
Valley point terminal capacitance (Ct): < 4 pF
Inductance: < 1.5 nH
Reverse current (IR): 20 mA
Temperature range: < +100 C

3I306G (3И306Г) GaAs Tunnel Diode for switching applications, metal-ceramic case

Peak point current (Ip): 2 mA
Peak point voltage (Vp): 170 mV
Projected peak-point voltage (Vpp): 0.85 V
Peak to valley current ratio (Ip/Iv): 8
Valley point terminal capacitance (Ct): < 8 pF
Forward current switching mode (IFS): 0.8 mA
Forward current constant mode (IFC): 0.8 mA
Reverse current (IR): 4 mA
Temperature range: -60 to +100 C

3I306L (3И306Л) GaAs Tunnel Diode for switching applications, metal-ceramic case

Peak point current (Ip): 10 mA (9…11)
Peak point voltage (Vp): 170 mV
Projected peak-point voltage (Vpp): 0.85 V
Peak to valley current ratio (Ip/Iv): 8
Valley point terminal capacitance (Ct): < 12 pF
Forward current switching mode (IFS): 4 mA
Forward current constant mode (IFC): 4 mA
Reverse current (IR): 20 mA
Temperature range: -60 to +100 C

3I306M (3И306М) GaAs Tunnel Diode for switching applications, metal-ceramic case

Peak point current (Ip): 10 mA (9…11)
Peak point voltage (Vp): 170 mV
Projected peak-point voltage (Vpp): 0.85 V
Peak to valley current ratio (Ip/Iv): 8
Valley point terminal capacitance (Ct): < 30 pF
Forward current switching mode (IFS): 4 mA
Forward current constant mode (IFC): 4 mA
Reverse current (IR): 20 mA
Temperature range: -60 to +100 C

3I306M (3И306Н) GaAs Tunnel Diode for switching applications, metal-ceramic case

Peak point current (Ip): 10 mA (9…11)
Peak point voltage (Vp): 170 mV
Projected peak-point voltage (Vpp): 0.85 V
Peak to valley current ratio (Ip/Iv): 8
Valley point terminal capacitance (Ct): 15..50 pF
Forward current switching mode (IFS): 12 mA
Forward current constant mode (IFC): 9 mA
Reverse current (IR): 20 mA
Temperature range: -60 to +100 C

AI301A, AI301V (АИ301А) GaAs Tunnel Diode for switching applications, metal-ceramic case

Peak point current (Ip): 2 mA
Peak point voltage (Vp): 180 mV
Projected peak-point voltage (Vpp): 0.65 V
Peak to valley current ratio (Ip/Iv): 8
Valley point terminal capacitance (Ct): < 12 pF
Inductance: < 1.5 nH
Temperature range: < +70 C

AI301B (АИ301Б) GaAs Tunnel Diode for switching applications, metal-ceramic case

Peak point current (Ip): 5 mA
Peak point voltage (Vp): 180 mV
Projected peak-point voltage (Vpp): 0.85 V - 1.15 V
Peak to valley current ratio (Ip/Iv): 8
Valley point terminal capacitance (Ct): < 25 pF
Inductance: < 1.5 nH
Temperature range: < +70 C

AI301G (АИ301Г) GaAs Tunnel Diode for switching applications, metal-ceramic case

Peak point current (Ip): 10 mA
Peak point voltage (Vp): 180 mV
Projected peak-point voltage (Vpp): 0.8 V
Peak to valley current ratio (Ip/Iv): 8
Valley point terminal capacitance (Ct): < 50 pF
Inductance: < 1.5 nH
Temperature range: < +70 C

AI402I (АИ402И) GaAs Tunnel Diode for switching applications, metal-ceramic case

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AI201L Diode Ga-As Oscillator Tunnel Peak Point Current: 90...110mA  ?? Peak Point Voltage: 330V  ??? mV! Valley Point Terminal Capacitance: 10...40pF Differential Resistance: 2.5 Ohm Peak to Valley Current Ratio: 10

1I103A, 1I103V (1И103Б)

Frequency, max 20 GHz
Peak Point Current 1.3...1.7mA
Peak Point Voltage 90mV
Peak to Valley Current Ratio 4
Noise Ratio 1...1.5
Loss Resistance 7 Ohm
Negative Differential Conductivity 17...10 MOhm
Terminal Capacitance 0.7...1.3pF
Case Capacitance 0.42...0.58pF
Inductance 0.2nH
Forward Current, DC 1.5mA
Reverse Current, DC 1.5mA
Forward Voltage, DC 400mV
Reverse Voltage, DC 20mV
Constant Power Dissipation 3mW
Pulse Power Dissipation 100mW

GI401A

Forward Current DC max, 0.3 mA
Reverse Current DC, 4 mA
Forward Voltage DC, 330 mV at IF = 0.1mA
Reverse Voltage DC, 90 mV at IR = 1mA
Valley Point Terminal Capacitance, Ct, 1.2…1.5 pF
Temperature range, C -55…+70


GI103V

Frequency, max 20GHz
Peak Point Current 0.7 ... 1.3mA
Peak Point Voltage 90mV
Peak to Valley Current Ratio 4
Noise Ratio 1 ... 1.5
Loss Resistance 6 Ohm
Negative Differential Conductivity 17 ... 10 MOhm
Terminal Capacitance 0.7 ... 1.3pF
Case Capacitance 0.42 ... 0.58pF
Inductance 0.2nH
Forward Current, DC 1.5mA
Reverse Current, DC 1.5mA
Forward Voltage, DC 50mV
Reverse Voltage, DC 20mV
Constant Power Dissipation 4mW
Pulse Power Dissipation 10mW

1I103A

Frequency, max 10 GHz
Peak Point Current 1.3...1.7 mA
Peak Point Voltage 90 mV
Peak to Valley Current Ratio 4
Noise Ratio 1...1.5
Loss Resistance 6 Ohm
Negative Differential Conductivity 17...10 MOhm
Terminal Capacitance 1...2 pF
Case Capacitance 0.42...0.58 pF
Inductance 0.2 nH
Forward Current, DC 1.5 mA
Reverse Current, DC 1.5 mA
Forward Voltage, DC 400 mV
Reverse Voltage, DC 20 mV
Constant Power Dissipation 5 mW
Pulse Power Dissipation 200 mW


GI304A

Peak current :
T = +25 ° C, 4.5 ... 5.1 mA
T = -40 ° C, 3.6 ... 5.61 mA
T = 60 ° C, 4.05 ... 5.61 mA
Voltage solution for / = 5 mA
T = +25 ° C, > 420 mV
T = -40 ° C, < 525 mV
T = +60 ° C, > 336 mV
Voltage peak maximum 65 mV
Total capacity at the minimum of the current-voltage characteristics at f = 5 ... 20 MHz < 20 pF
Limit operating data
Constant forward and reverse currents : 1I304A , 1I304B : GI304A : T = -40 ... +20 ° C 10 mA, T = +60 ° C 7.5 mA
Ambient temperature GI304A -40 ... +60 ° C.

1I404A

Frequency Range 3 - 30GHz
Peak Point Current 0.14 - 0.29mA
Peak Point Voltage 90mV
Loss Resistance 9 Ohm
Valley Point Terminal Capacitance 0.5 - 1pF
Case Capacitance 0.45...0.55pF
Inductance 0.2nH
Forward Current, DC 0.4mA
Reverse Current, DC 2mA
Forward Voltage, DC at IF =0.5mA 350mV
Forward Voltage, DC at IF =0.3mA 360 - 470mV
Reverse Voltage, DC at IR=3mA 75 - 105mV
Constant Power Dissipation 2mW
Pulse Power Dissipation 8mW

1I404B/V

Frequency Range 3 - 30GHz
Peak Point Current 0.14 - 0.29mA
Peak Point Voltage 90mV
Loss Resistance 7 Ohm
Valley Point Terminal Capacitanc 1.0 - 2.0pF
Case Capacitance 0.45...0.55pF
Inductance 0.2nH
Forward Current, DC 0.8mA
Reverse Current, DC 4mA
Forward Voltage, DC at IF =0.5mA 350mV
Forward Voltage, DC at IF =0.3mA 360 - 470mV
Reverse Voltage, DC at IR=3mA 75 - 105mV
Constant Power Dissipation 5mW
Pulse Power Dissipation 50mW

1I104A

Frequency Range 3...15GHz
Cutoff Frequency 11...25GHz
Peak Point Current 1.3...1.7mA
Peak Point Voltage 90mV
Peak to Valley Current Ratio 4
Loss Resistance 6 Ohm
Valley Point Terminal Capacitance 0.8 - 1.9pF
Case Capacitance 0.42...0.58pF
Inductance 0.1nH
Forward Current, DC 0.51mA
Reverse Current, DC 1.5mA
Forward Voltage, DC 400mV
Reverse Voltage, DC 20mV
Constant Power Dissipation 5mW
Pulse Power Dissipation 200mW
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