Russian tunnel diodes: Difference between revisions
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Tunnel_Diode-RU-1I308G.jpg | Russian Tunnel Diode 1I308G - VI Curve | |||
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[[Category:Tunnel diodes]] | [[Category:Tunnel diodes]] | ||
Revision as of 14:24, 21 June 2018
This is a collection of characteristic data for Russian tunnel diodes. Most of these are available from various surplus sellers, often on ebay.
Schema of type designations:
- Gxxxx = Germanium, Commercial grade
- 1xxxx = Germanium, Military grade
- Axxxx = Gallium Arsenide, Commercial grade
- 3xxxx = Gallium Arsenide, Military grade
- xI1xx (like AI101) are for amplifiers
- xI2xx (like AI201) are for generators
- xI3xx (like AI301, GI306) are for switching circuits or general use
- xI4xx are Backward Diodes for switching circuit and general use
| Type | Alt.Type | Material | Use | Ip | Vp | Vpp | Ip / Iv | Rd | Ct | L | f | IFS | IFC | IR | Temp |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1I103A (1И103А) | Ge | Amplifier | 1.3—1.7 mA | 90 mV | - | 4 | 6 Ω | T 1-2 pF C 0.42-0.58pF |
0.2 nH | 10 GHz | |||||
| 1I103B/1I103V (1И103Б) | GI103B/GI103V (ГИ103Б) | Ge | Amplifier | 1.3—1.7 mA | 90 mV | - | 4 | 8 Ω | T 0.7-1.3 pF C 0.42-0.58pF |
0.2 nH | 20 GHz | ||||
| 1I104A (1И104А) | Ge | Amplifier | 1.3—1.7 mA | 90 mV | - | 4 | 6 Ω | T 0.8–1.9 pF C 0.42-0.58pF |
0.2 nH | 3–15 GHz | |||||
| 1I304A (1И304А) | GI304A (ГИ304А) | Ge | Switching | 4.5–5.1 mA | 420 mV | < 20 pF | +60°C | ||||||||
| 1I304B/1I304V (1И304Б) | GI304B/GI304V (ГИ304Б) | Ge | Switching | 4.8–5.4 mA | 56 mV | 0.4 V | 8 | < 20 pF | 10 mA | +100°C | |||||
| 1I305A (1И305А) | Ge | Switching | 9.2–10.4 mA | 70 mV | 0.4 V | 8 | < 30 pF | 20 mA | +100°C | ||||||
| 1I305B/1I305V (1И305Б) | Ge | Switching | 9.6–10.8 mA | 70 mV | 0.4 V | 8 | < 30 pF | 20 mA | +100°C | ||||||
| 1I307A (1И307А) | GI307A (ГИ307А) | Ge | Switching | 1.8–2.2 mA | 65 mV | 0.4 V | 7 | < 20 pF | +100°C | ||||||
| 1I308A (1И308А) | GI308A (ГИ308А) | Ge | Switching | 4.5–5.5 mA | 85 mV | 0.43 V | 9 | 1.5–5 pF | 0.25 nH | +85°C | |||||
| 1I308B (1И308Б) | GI308B (ГИ308Б) | Ge | Switching | 4.5–5.5 mA | 5 | 0.7–2.0 pF | +70°C | ||||||||
| 1I308V (1И308В) | GI308V (ГИ308В) | Ge | Switching | 10 mA | 5 | 4.0–10 pF | +70°C | ||||||||
| 1I308G (1И308Г) | GI308G (ГИ308Г) | Ge | Switching | 10 mA | 5 | 1.5–5.0 pF | +70°C | ||||||||
| 1I308D (1И308Д) | GI308D (ГИ308Д) | Ge | Switching | 10 mA | 5 | 0.8–2.0 pF | +70°C | ||||||||
| 1I308E (1И308Е) | GI308E (ГИ308Е) | Ge | Switching | 20 mA | 5 | 3.0–15 pF | +70°C | ||||||||
| 1I308J (1И308Ж) | GI308J (ГИ308Ж) | Ge | Switching | 20 mA | 5 | 1.0–4.0 pF | +70°C | ||||||||
| 1I308I (1И308И) | GI308I (ГИ308И) | Ge | Switching | 50 mA | 5 | 5.0–20 pF | +70°C | ||||||||
| 1I308K (1И308К) | GI308K (ГИ308К) | Ge | Switching | 50 mA | 5 | 2.3–8.0 pF | +70°C | ||||||||
| 3I101A (3И101А) | AI101A (АИ101А) | GaAs | Amplifier | 0.75–1.25 mA | 160 mV | 5 | 24 Ω | 3 pF | 1.3 nH | +85°C | |||||
| 3I101B/3I101V (3И101Б) | AI101B/AI101V (АИ101Б) | GaAs | Amplifier | 1.7–2.3 mA | 160 mV | 6 | 16 Ω | < 5 pF | +85°C | ||||||
| 3I101D (3И101Д) | AI101D (АИ101Д) | GaAs | Amplifier | 1.7–2.3 mA | 160 mV | 5 | 14 Ω | 2.5–10 pF | 1.3 nH | +85°C | |||||
| 3I101E (3И101Е) | AI101E (АИ101Е) | GaAs | Amplifier | 4.5–5.5 mA | 180 mV | 5 | 10 Ω | 2–6 pF | 1.3 nH | +85°C | |||||
| 3I101I (3И101И) | AI101I (АИ101И) | GaAs | Amplifier | 4.5–5.5 mA | 160 mV | 6 | 7 Ω | 4.5–13 pF | 1.3 nH | +85°C | |||||
| 3I201A (3И201А) | AI201A (АИ201А) | GaAs | Oscillator | 9–11 mA | 200 mV | 10 | 8 Ω | 3.5 pF | 1.3 nH | +85°C | |||||
| 3I201B (3И201Б) | AI201B (АИ201Б) | GaAs | Oscillator | 9–11 mA | 180 mV | 10 | 8 Ω | 2.5–6 pF | 1.3 nH | +100°C | |||||
| 3I201V (3И201В) | AI201V (3И201В) | GaAs | Oscillator | 9–11 mA | 180 mV | 10 | 8 Ω | 4.5–10 pF | 1.3 nH | +100°C | |||||
| 3I201G (3И201Г) | AI201G (АИ201Г) | GaAs | Oscillator | 16–22 mA | 210 mV | 10 | 5 Ω | < 4 pF | 1.3 nH | +85°C | |||||
| 3I201D (3И201Д) | AI201D (АИ201Д) | GaAs | Oscillator | 16–22 mA | 200 mV | 10 | 5 Ω | < 4 pF | 1.3 nH | +85°C | |||||
| 3I201E (3И201Е) | AI201D (АИ201Е) | GaAs | Oscillator | 16–22 mA | 200 mV | 10 | 4 Ω | 5–12 pF | 1.3 nH | +85°C | |||||
| 3I201SH/3I201J (3И201Ж) | GaAs | Oscillator | 45–55 mA | 260 mV | 10 | 2.5 Ω | < 15 pF | < 1.3 nH | +100°C | ||||||
| 3I201K (3И201К) | AI201K (АИ201К) | GaAs | Oscillator | 90–110 mA | 330 mV | 10 | 2.2 Ω | < 15 pF | 1.3 nH | +85°C | |||||
| 3I201L (3И201Л) | AI201L (АИ201Л) | GaAs | Oscillator | 90–110 mA | 330 mV | 10 | 2.2 Ω | 10–40 pF | 1.3 nH | +85°C | |||||
| AI301A (АИ301А) | GaAs | Switching | 2 mA | 180 mV | 0.65 V | 8 | < 12 pF | < 1.5 nH | - | +70°C | |||||
| AI301B/AI301V (АИ301Б) | GaAs | Switching | 5 mA | 180 mV | 0.85–1.15 V | 8 | < 25 pF | < 1.5 nH | - | +70°C | |||||
| AI301G (АИ301Г) | GaAs | Switching | 10 mA | 180 mV | 0.8 V | 8 | < 50 pF | < 1.5 nH | - | +70°C | |||||
| 3I306E (3И306Е) | GaAs | Switching | 1.8–2.2 mA | 170 mV | 0.85 V | 8 | 4–12 pF | 2.4 mA | 1.8 mA | 4 mA | +100°C | ||||
| 3I306G (3И306Г) | GaAs | Switching | 2 mA | 170 mV | 0.85 V | 8 | < 8 pF | 0.8 mA | 0.8 mA | 4 mA | +100°C | ||||
| 3I306SH/3I306J (3И306Ж) | GaAs | Switching | 5 mA | 170 mV | 0.85 V | 8 | < 15 pF | 2 mA | 2 mA | 20 mA | +100°C | ||||
| 3I306K (3И306К) | GaAs | Switching | 4.5–5.5 mA | 170 mV | 0.85 V | 8 | 8–25 pF | 6 mA | 4.5 mA | 10 mA | +100°C | ||||
| 3I306L (3И306Л) | GaAs | Switching | 9–11 mA | 170 mV | 0.85 V | 8 | < 12 pF | 4 mA | 4 mA | 20 mA | +100°C | ||||
| 3I306M (3И306М) | GaAs | Switching | 9–11 mA | 170 mV | 0.85 V | 8 | < 30 pF | 4 mA | 4 mA | 20 mA | +100°C | ||||
| 3I306N (3И306Н) | GaAs | Switching | 9–11 mA | 170 mV | 0.85 V | 8 | 15–50 pF | 12 mA | 9 mA | 20 mA | +100°C | ||||
| 3I306R (3И306Р) | GaAs | Switching | 4.5–5.5 mA | 170 mV | 0.85 V | 8 | 4–25 pF | 6 mA | 4.5 mA | 10 mA | +100°C |
| Type | Alt. Type | Material | Use | IF | IR | VF | VR | Rd | CT | Temp |
|---|---|---|---|---|---|---|---|---|---|---|
| 1I401A (1И401А) | GI401A (ГИ401А) | Ge | Back Diode | 0.3 mA | 4 mA | 330 mV @ 0.1 mA | 90 mV @ 1 mA | 1.2–1.5 pF | -55…+70 C | |
| 1I404B/1I404V (1И404Б) | GI404B/GI404V (ГИ404Б) | Ge | Back Diode | 0.8 mA | 4 mA | 350 mV @ 0.5 mA | 75–105 mV @ 4 mA | 1–2 pF | ||
| 3I402B/3I402V (3И402Б) | GaAs | Back Diode | 0.05 mA | 2 mA | 600 mV @ 0.4 mA | 250 mV @ 4 mA | 14 Ω @ 100 mA | < 6 pF | ||
| 3I402G (3И402Г) | AI402G (АИ402Г) | GaAs | Back Diode | 0.05 mA | 2 mA | 600 mV @ 0.4 mA | 250 mV @ 4 mA | 1.5–3.5 pF | ||
| 3I402E (3И402Г) | AI402E (АИ402Е) | GaAs | Back Diode | |||||||
| 3I402I (3И402И) | AI402I (АИ402И) | GaAs | Back Diode | 0.05 mA | 4 mA | 600 mV @ 0.4 mA | 250 mV @ 4 mA | 14 Ω @ 100 mA | < 10 pF |
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Russian Tunnel Diode 1I308G - VI Curve
