1N3129: Difference between revisions

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The 1N3129 is a 20mA germanium [[tunnel_diodes|tunnel diode]].  1N3129 Specifications (from http://www.americanmicrosemi.com/catalog/1N3129.html):
The '''1N3129''' is a 20 mA Germanium [[tunnel_diodes|tunnel diode]].  1N3129 Specifications (from http://www.americanmicrosemi.com/catalog/1N3129.html):


* Ipeak Max. (A): 20m
* Peak current: 20 ± 1 mA
* Peak Curr. Tol.: 1.0m
* Total capacitance: 20 pF
* Total Cap. (F): 20p
* Peak to valley current ratio: min. 8.0
* Ip/Iv Min: 8.0
* Peak voltage: 100 mV
* Vp: 100m
* Valley voltage: 300 mV
* Vv: 300m
* Forward voltage at peak current: 575 mV
* Fwd Volt @Ipeak: 575m
* Series inductance: 0.6 nH
* Series Induct. (H): 600p
* Series resistance: 2.5 Ω
* R(series) (Ohms): 2.5
* Semiconductor material: Germanium
* Semiconductor Material: Germanium
* Maximum operating temperature: 100 °C
* Maximum Operating Temp (шC): 100’
* Package style: DO-25var
* Package Style: DO-25var
* Mounting style: T
* Mounting Style: T


The 1N3129 is used in the [[3T77]].
==Used in==
* [[3T77]]




[[Category:Tunnel diodes]]
[[Category:Tunnel diodes]]

Revision as of 14:37, 29 August 2017

The 1N3129 is a 20 mA Germanium tunnel diode. 1N3129 Specifications (from http://www.americanmicrosemi.com/catalog/1N3129.html):

  • Peak current: 20 ± 1 mA
  • Total capacitance: 20 pF
  • Peak to valley current ratio: min. 8.0
  • Peak voltage: 100 mV
  • Valley voltage: 300 mV
  • Forward voltage at peak current: 575 mV
  • Series inductance: 0.6 nH
  • Series resistance: 2.5 Ω
  • Semiconductor material: Germanium
  • Maximum operating temperature: 100 °C
  • Package style: DO-25var
  • Mounting style: T

Used in