1N3129: Difference between revisions
Jump to navigation
Jump to search
(New page: 1N3129 Specifications (from http://www.americanmicrosemi.com/catalog/1N3129.html): * Ipeak Max. (A): 20m * Peak Curr. Tol.: 1.0m * Total Cap. (F): 20p * Ip/Iv Min: 8.0 * Vp: 100m * Vv: 30...) |
No edit summary |
||
| Line 1: | Line 1: | ||
1N3129 Specifications (from http://www.americanmicrosemi.com/catalog/1N3129.html): | The 1N3129 is a 20mA germanium [[tunnel_diodes|tunnel diode]]. 1N3129 Specifications (from http://www.americanmicrosemi.com/catalog/1N3129.html): | ||
* Ipeak Max. (A): 20m | * Ipeak Max. (A): 20m | ||
Revision as of 16:26, 26 July 2011
The 1N3129 is a 20mA germanium tunnel diode. 1N3129 Specifications (from http://www.americanmicrosemi.com/catalog/1N3129.html):
- Ipeak Max. (A): 20m
- Peak Curr. Tol.: 1.0m
- Total Cap. (F): 20p
- Ip/Iv Min: 8.0
- Vp: 100m
- Vv: 300m
- Fwd Volt @Ipeak: 575m
- Series Induct. (H): 600p
- R(series) (Ohms): 2.5
- Semiconductor Material: Germanium
- Maximum Operating Temp (шC): 100’
- Package Style: DO-25var
- Mounting Style: T