Page values for "Patent US 4819049A"
Jump to navigation
Jump to search
"_pageData" values
1 row is stored for this pageField | Field type | Value |
---|---|---|
_creationDate | Datetime | 2021-08-31 11:26:30 AM |
_modificationDate | Datetime | 2021-08-31 11:26:30 AM |
_categories | List of String, delimiter: | | Patents |
_isRedirect | Boolean | No |
_pageID | Integer | 28,339 |
_pageName | Page | Patent US 4819049A |
_pageTitle | String | Patent US 4819049A |
_pageNamespace | Integer | 0 |
"Patents" values
1 row is stored for this pageField | Field type | Value |
---|---|---|
Office | String | US |
Number | String | 4819049A |
Title | String | Method of fabricating high voltage and low voltage transistors using an epitaxial layer of uniform thickness |
Inventors | List of Page, delimiter: ; | Roger E. Johnston • Alex Y. Tang |
Company | List of Page, delimiter: ; | Tektronix Inc |
Filing_date | Date | 1988-06-02 |
Grant_date | Date | 1989-04-04 |
Cites | List of Page, delimiter: ; | |
Links | List of Page, delimiter: ; |