Patent US 4261761A
| Patent number | US 4261761A (click link for details and documents via Google Patents) |
|---|---|
| Title | Method of manufacturing sub-micron channel width MOS transistor |
| Inventors | Shuichi Sato, Tadanori Yamaguchi, Arthur D. Ritchie |
| Company | Tektronix Inc |
| Filing date | 1979-09-04 |
| Grant date | 1981-04-14 |