Tadanori Yamaguchi

Tadanori Yamaguchi (? – ?)

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Patents by Tadanori Yamaguchi

Page	Office	Number	Title	Inventors	Company	Filing date	Grant date
Patent US 4217599A	US	4217599A	Narrow channel MOS devices and method of manufacturing	Shuichi Sato • Tadanori Yamaguchi • Arthur D. Ritchie	Tektronix Inc	1977-12-21	1980-08-12
Patent US 4229756A	US	4229756A	Ultra high speed complementary MOS device	Shuichi Sato • Tadanori Yamaguchi • Jack Sachitano	Tektronix Inc	1979-02-09	1980-10-21
Patent US 4228447A	US	4228447A	Submicron channel length MOS inverter with depletion-mode load transistor	Shuichi Sato • Tadanori Yamaguchi	Tektronix Inc	1979-02-12	1980-10-14
Patent US 4261761A	US	4261761A	Method of manufacturing sub-micron channel width MOS transistor	Shuichi Sato • Tadanori Yamaguchi • Arthur D. Ritchie	Tektronix Inc	1979-09-04	1981-04-14
Patent US 4477310A	US	4477310A	Process for manufacturing MOS integrated circuit with improved method of forming refractory metal silicide areas	Hee K. Park • Tadanori Yamaguchi	Tektronix Inc	1983-08-12	1984-10-16
Patent US 4486266A	US	4486266A	Integrated circuit method	Tadanori Yamaguchi	Tektronix Inc	1983-08-12	1984-12-04
Patent US 4902640A	US	4902640A	High speed double polycide bipolar/CMOS integrated circuit process	Jack Sachitano • Hee K. Park • Paul K. Boyer • Gregory C. Eiden • Tadanori Yamaguchi	Tektronix Inc	1987-08-19	1990-02-20
Patent US 4876214A	US	4876214A	Method for fabricating an isolation region in a semiconductor substrate	Tadanori Yamaguchi • Evan Patton • Eric Lane • Simon Yu	Tektronix Inc	1988-06-02	1989-10-24
Patent US 4994400A	US	4994400A	Method of fabricating a semiconductor device using a tri-layer structure and conductive sidewalls	Tadanori Yamaguchi • Yeou-Chong S. Yu • Carol A. Hacherl • Evan E. Patton	Tektronix Inc	1989-01-27	1991-02-19