1 row is stored for this page
| Field | Field type | Value |
|---|
| _creationDate | Datetime | 2021-08-31 11:03:26 AM |
| _modificationDate | Datetime | 2021-08-31 11:03:26 AM |
| _categories | List of String, delimiter: | | Patents |
| _isRedirect | Boolean | No |
| _pageID | Integer | 27,435 |
| _pageName | Page | Patent US 3656031A |
| _pageTitle | String | Patent US 3656031A
|
| _pageNamespace | Integer | 0 |
1 row is stored for this page
| Field | Field type | Value |
|---|
| Office | String | US |
| Number | String | 3656031A |
| Title | String | Low noise field effect transistor with channel having subsurface portion of high conductivity |
| Inventors | List of Page, delimiter: ; | Heber J Bresee • James L Bowman |
| Company | List of Page, delimiter: ; | Tektronix Inc |
| Filing_date | Date | 1970-12-14 |
| Grant_date | Date | 1972-04-11 |
| Cites | List of Page, delimiter: ; | |