Patent US 3538399A
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| Patent number | US 3538399A (click link for details and documents via Google Patents) |
|---|---|
| Title | Pn junction gated field effect transistor having buried layer of low resistivity |
| Inventors | Heber J Bresee, George R Wilson |
| Company | Tektronix Inc |
| Filing date | 1968-05-15 |
| Grant date | 1970-11-03 |