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S-4: Difference between revisions
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==Internals== | ==Internals== | ||
The S-4 sampling gate is based upon a traveling wave trapped-charge transmission line | The [[Sampler#Six-Diode_Sampler|S-4 sampling gate]] is based upon a traveling wave trapped-charge transmission line | ||
in which the sampling window is set by the propagation time of a pulse edge through a thick-film transmission line. | in which the sampling window is set by the propagation time of a pulse edge through a thick-film transmission line. | ||
This technique requires only a sharp pulse edge rather than a precise pulse width, which is harder to generate. | This technique requires only a sharp pulse edge rather than a precise pulse width, which is harder to generate. | ||