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OC170: Difference between revisions
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Undo revision 90213 by Jadney (talk)
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|Description=alloy-diffused Germanium PNP transistor | |Description=alloy-diffused Germanium PNP transistor | ||
|an=an | |an=an | ||
|Used_in=321;661 | |Used_in=321;661; | ||
}}. | }}. | ||
It has a breakdown voltage of about 20 V and a maximum collector current of 10 mA. | It has a breakdown voltage of about 20 V and a maximum collector current of 10 mA. | ||
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The OC170 was developed by Philips and introduced in the late 1950s. | The OC170 was developed by Philips and introduced in the late 1950s. | ||
Due to [[Germanium transistors|tin whiskers growing inside the case]], OC170s a common source of problems on equipment of the period. | Due to [[Germanium transistors|tin whiskers growing inside the case]], OC170s are a common source of problems on equipment of the period. | ||
==Links== | ==Links== | ||