Page values for "Patent US 3538399A"
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"_pageData" values
1 row is stored for this pageField | Field type | Value |
---|---|---|
_creationDate | Datetime | 2021-08-31 11:02:45 AM |
_modificationDate | Datetime | 2021-08-31 11:02:45 AM |
_categories | List of String, delimiter: | | Patents |
_isRedirect | Boolean | No |
_pageID | Integer | 27,378 |
_pageName | Page | Patent US 3538399A |
_pageTitle | String | Patent US 3538399A |
_pageNamespace | Integer | 0 |
"Patents" values
1 row is stored for this pageField | Field type | Value |
---|---|---|
Office | String | US |
Number | String | 3538399A |
Title | String | Pn junction gated field effect transistor having buried layer of low resistivity |
Inventors | List of Page, delimiter: ; | Heber J Bresee • George R Wilson |
Company | List of Page, delimiter: ; | Tektronix Inc |
Filing_date | Date | 1968-05-15 |
Grant_date | Date | 1970-11-03 |
Cites | List of Page, delimiter: ; | |
Links | List of Page, delimiter: ; |