Page values for "Patent US 4261761A"
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"_pageData" values
1 row is stored for this page| Field | Field type | Value |
|---|---|---|
| _creationDate | Datetime | 2021-08-31 11:06:21 AM |
| _modificationDate | Datetime | 2021-08-31 11:06:21 AM |
| _categories | List of String, delimiter: | | Patents |
| _isRedirect | Boolean | No |
| _pageID | Integer | 27,674 |
| _pageName | Page | Patent US 4261761A |
| _pageTitle | String | Patent US 4261761A |
| _pageNamespace | Integer | 0 |
"Patents" values
1 row is stored for this page| Field | Field type | Value |
|---|---|---|
| Office | String | US |
| Number | String | 4261761A |
| Title | String | Method of manufacturing sub-micron channel width MOS transistor |
| Inventors | List of Page, delimiter: ; | Shuichi Sato • Tadanori Yamaguchi • Arthur D. Ritchie |
| Company | List of Page, delimiter: ; | Tektronix Inc |
| Filing_date | Date | 1979-09-04 |
| Grant_date | Date | 1981-04-14 |
| Cites | List of Page, delimiter: ; | |
| Links | List of Page, delimiter: ; |