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Russian tunnel diodes: Difference between revisions
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Typo in GI308A
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|'''1I307A (1И307А)''' || '''GI307A (ГИ307А)''' || Ge || Switching || 1.8–2.2 mA || 65 mV || 0.4 V || 7 || || < 20 pF || || || || || || +100°C | |'''1I307A (1И307А)''' || '''GI307A (ГИ307А)''' || Ge || Switching || 1.8–2.2 mA || 65 mV || 0.4 V || 7 || || < 20 pF || || || || || || +100°C | ||
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|'''1I308A (1И308А)''' || '''GI308A ( | |'''1I308A (1И308А)''' || '''GI308A (ГИ308А)''' || Ge || Switching || 4.5–5.5 mA || 85 mV || 0.43 V || 9 || || 1.5–5 pF || 0.25 nH || || || || || +85°C | ||
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|'''1I308B (1И308Б)''' || '''GI308B (ГИ307Б)''' || Ge || Switching || 4.5–5.5 mA || || || 5 || || 0.7–2.0 pF || || || || || || +70°C | |'''1I308B (1И308Б)''' || '''GI308B (ГИ307Б)''' || Ge || Switching || 4.5–5.5 mA || || || 5 || || 0.7–2.0 pF || || || || || || +70°C | ||