1N3129: Difference between revisions
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The 1N3129 is a | The '''1N3129''' is a 20 mA Germanium [[tunnel_diodes|tunnel diode]]. 1N3129 Specifications (from http://www.americanmicrosemi.com/catalog/1N3129.html): | ||
* Peak current: 20 ± 1 mA | |||
* Peak | * Total capacitance: 20 pF | ||
* Total | * Peak to valley current ratio: min. 8.0 | ||
* | * Peak voltage: 100 mV | ||
* | * Valley voltage: 300 mV | ||
* | * Forward voltage at peak current: 575 mV | ||
* | * Series inductance: 0.6 nH | ||
* Series | * Series resistance: 2.5 Ω | ||
* | * Semiconductor material: Germanium | ||
* Semiconductor | * Maximum operating temperature: 100 °C | ||
* Maximum | * Package style: DO-25var | ||
* Package | * Mounting style: T | ||
* Mounting | |||
==Used in== | |||
* [[3T77]] | |||
[[Category:Tunnel diodes]] | [[Category:Tunnel diodes]] |
Revision as of 14:37, 29 August 2017
The 1N3129 is a 20 mA Germanium tunnel diode. 1N3129 Specifications (from http://www.americanmicrosemi.com/catalog/1N3129.html):
- Peak current: 20 ± 1 mA
- Total capacitance: 20 pF
- Peak to valley current ratio: min. 8.0
- Peak voltage: 100 mV
- Valley voltage: 300 mV
- Forward voltage at peak current: 575 mV
- Series inductance: 0.6 nH
- Series resistance: 2.5 Ω
- Semiconductor material: Germanium
- Maximum operating temperature: 100 °C
- Package style: DO-25var
- Mounting style: T