User:Peter/Russian tunnel diodes
| Type | Alt.Type | Material | Use | Ip | Vp | Vpp | Ip / Iv | Rd | Ct | L | f | IFS | IFC | IR | Temp |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1I103A (1И103А) | Ge | Amplifier | 1.3—1.7 mA | 90 mV | - | 4 | 6 Ω | T 1-2 pF C 0.42-0.58pF |
0.2 nH | 10 GHz | |||||
| 1I103B/1I103V (1И103Б) | GI103B/GI103V (ГИ103Б) | Ge | Amplifier | 1.3—1.7 mA | 90 mV | - | 4 | 8 Ω | T 0.7-1.3 pF C 0.42-0.58pF |
0.2 nH | 20 GHz | ||||
| 1I104A (1И104А) | Ge | Amplifier | 1.3—1.7 mA | 90 mV | - | 4 | 6 Ω | T 0.8–1.9 pF C 0.42-0.58pF |
0.2 nH | 3–15 GHz | |||||
| 1I304A (1И304А) | GI304A (ГИ304А) | Ge | Switching | 4.5–5.1 mA | 420 mV | < 20 pF | +60 C | ||||||||
| 1I304B/1I304V (1И304Б) | GI304B/GI304V (ГИ304Б) | Ge | Switching | 4.8–5.4 mA | 56 mV | 0.4 V | 8 | < 20 pF | 10 mA | +100 C | |||||
| 1I305A (1И305А) | Ge | Switching | 9.2–10.4 mA | 70 mV | 0.4 V | 8 | < 30 pF | 20 mA | +100 C | ||||||
| 1I305B/1I305V (1И305Б) | Ge | Switching | 9.6–10.8 mA | 70 mV | 0.4 V | 8 | < 30 pF | 20 mA | +100 C | ||||||
| 1I307A (1И307А) | GI307A (ГИ307А) | Ge | Switching | 1.8–2.2 mA | 65 mV | 0.4 V | 7 | < 20 pF | +100 C | ||||||
| 1I308A (1И308А) | Ge | Switching | 4.5–5.5 mA | 85 mV | 0.43 V | 9 | 1.5–5 pF | 0.25 nH | +85 C | ||||||
| 3I101A (3И101А) | AI101A (АИ101А) | GaAs | Amplifier | 0.75–1.25 mA | 160 mV | 5 | 24 Ω | 3 pF | 1.3 nH | +85 C | |||||
| 3I101B/3I101V (3И101Б) | AI101B/AI101V (АИ101Б) | GaAs | Amplifier | 1.7–2.3 mA | 160 mV | 6 | 16 Ω | < 5 pF | +85 C | ||||||
| 3I101D (3И101Д) | AI101D (АИ101Д) | GaAs | Amplifier | 1.7–2.3 mA | 160 mV | 5 | 14 Ω | 2.5–10 pF | 1.3 nH | +85 C | |||||
| 3I101E (3И101Е) | AI101E (АИ101Е) | GaAs | Amplifier | 4.5–5.5 mA | 180 mV | 5 | 10 Ω | 2–6 pF | 1.3 nH | ||||||
| 3I101I (3И101И) | AI101I (АИ101И) | GaAs | Amplifier | 4.5–5.5 mA | 160 mV | 6 | 7 Ω | 4.5–13 pF | 1.3 nH | +85 C | |||||
| 3I201A (3И201А) | AI201A (АИ201А) | GaAs | Oscillator | 9–11 mA | 200 mV | 10 | 8 Ω | 3.5 pF | 1.3 nH | +85 C | |||||
| 3I201B (3И201Б) | AI201B (АИ201Б) | GaAs | Oscillator | 9–11 mA | 180 mV | 10 | 8 Ω | 2.5–6 pF | 1.3 nH | - | |||||
| 3I201V (3И201В) | AI201V (3И201В) | GaAs | Oscillator | 9–11 mA | 180 mV | 10 | 8 Ω | 4.5–10 pF | 1.3 nH | +100 C | |||||
| 3I201G (3И201Г) | AI201G (АИ201Г) | GaAs | Oscillator | 16–22 mA | 210 mV | 10 | 5 Ω | < 4 pF | 1.3 nH | +85 C | |||||
| 3I201D (3И201Д) | AI201D (АИ201Д) | GaAs | Oscillator | 16–22 mA | 200 mV | 10 | 5 Ω | < 4 pF | 1.3 nH | +85 C | |||||
| 3I201E (3И201Е) | AI201D (АИ201Е) | GaAs | Oscillator | 16–22 mA | 200 mV | 10 | 4 Ω | 5–12 pF | 1.3 nH | +85 C | |||||
| 3I201SH/3I201J (3И201Ж) | GaAs | Oscillator | 45–55 mA | 260 mV | 10 | 2.5 Ω | < 15 pF | < 1.3 nH | +100 C | ||||||
| 3I201K (3И201К) | AI201K (АИ201К) | GaAs | Oscillator | 90–110 mA | 330 mV | 10 | 2.2 Ω | < 15 pF | 1.3 nH | +85 C | |||||
| 3I201L (3И201Л) | AI201L (АИ201Л) | GaAs | Oscillator | 90–110 mA | 330 mV | 10 | 2.2 Ω | 10–40 pF | 1.3 nH | +85 C | |||||
| AI301A (АИ301А) | GaAs | Switching | 2 mA | 180 mV | 0.65 V | 8 | < 12 pF | < 1.5 nH | - | +70 C | |||||
| AI301B/AI301V (АИ301Б) | GaAs | Switching | 5 mA | 180 mV | 0.85–1.15 V | 8 | < 25 pF | < 1.5 nH | - | +70 C | |||||
| AI301G (АИ301Г) | GaAs | Switching | 10 mA | 180 mV | 0.8 V | 8 | < 50 pF | < 1.5 nH | - | +70 C | |||||
| 3I306E (3И306Е) | GaAs | Switching | 1.8–2.2 mA | 170 mV | 0.85 V | 8 | 4–12 pF | 2.4 mA | 1.8 mA | 4 mA | +100 C | ||||
| 3I306G (3И306Г) | GaAs | Switching | 2 mA | 170 mV | 0.85 V | 8 | < 8 pF | 0.8 mA | 0.8 mA | 4 mA | +100 C | ||||
| 3I306SH/3I306J (3И306Ж) | GaAs | Switching | 5 mA | 170 mV | 0.85 V | 8 | < 15 pF | 2 mA | 2 mA | 20 mA | +100 C | ||||
| 3I306K (3И306К) | GaAs | Switching | 4.5–5.5 mA | 170 mV | 0.85 V | 8 | 8–25 pF | 6 mA | 4.5 mA | 10 mA | +100 C | ||||
| 3I306L (3И306Л) | GaAs | Switching | 9–11 mA | 170 mV | 0.85 V | 8 | < 12 pF | 4 mA | 4 mA | 20 mA | +100 C | ||||
| 3I306M (3И306М) | GaAs | Switching | 9–11 mA | 170 mV | 0.85 V | 8 | < 30 pF | 4 mA | 4 mA | 20 mA | +100 C | ||||
| 3I306N (3И306Н) | GaAs | Switching | 9–11 mA | 170 mV | 0.85 V | 8 | 15–50 pF | 12 mA | 9 mA | 20 mA | +100 C | ||||
| 3I306R (3И306Р) | GaAs | Switching | 4.5–5.5 mA | 170 mV | 0.85 V | 8 | 4–25 pF | 6 mA | 4.5 mA | 10 mA | +100 C |
| Type | Alt. Type | Material | Use | IF | IR | VF | VR | Rd | CT | Temp |
|---|---|---|---|---|---|---|---|---|---|---|
| 1I401A (1И401А) | GI401A (ГИ401А) | Ge | Back Diode | 0.3 mA | 4 mA | 330 mV @ 0.1 mA | 90 mV @ 1 mA | 1.2–1.5 pF | -55…+70 C | |
| 1I404B/1I404V (1И404Б) | GI404B/GI404V (ГИ404Б) | Ge | Back Diode | 0.8 mA | 4 mA | 350 mV @ 0.5 mA | 75–105 mV @ 4 mA | 1–2 pF | ||
| 3I402B/3I402V (3И402Б) | GaAs | Back Diode | 0.05 mA | 2 mA | 600 mV @ 0.4 mA | 250 mV @ 4 mA | 14 Ω @ 100 mA | < 6 pF | ||
| 3I402G (3И402Г) | AI402G (АИ402Г) | GaAs | Back Diode | 0.05 mA | 2 mA | 600 mV @ 0.4 mA | 250 mV @ 4 mA | 1.5–3.5 pF | ||
| 3I402E (3И402Г) | AI402E (АИ402Е) | GaAs | Back Diode | |||||||
| 3I402I (3И402И) | AI402I (АИ402И) | GaAs | Back Diode | 0.05 mA | 4 mA | 600 mV @ 0.4 mA | 250 mV @ 4 mA | 14 Ω @ 100 mA | < 10 pF |
- "G", "1" = Germanium
- "A", "3" = Gallium Arsenide
- "1", "3" = Military grade
- "A", "G" = Commercial grade
- xI1xx (like AI101) are for amplifiers
- xI2xx (like AI201) are for generators
- xI3xx (like AI301, GI306) are for switching circuits or general use
- xI4xx are Backward Diodes for switching circuit and general use
1I305B (1И305Б) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 9.6 - 10.8 mA
- Peak point voltage (Vp): 70 mV
- Projected peak-point voltage (Vpp): 0.4 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 30 pF
- Reverse current (IR): 20 mA
- Temperature range: < +100 C
3I201L (3И201Г) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 20 mA
- Peak point voltage (Vp): 210 mV
- Peak to valley current ratio (Ip/Iv): 10
- Valley point terminal capacitance (Ct): < 4 pF
- Inductance: < 1.5 nH
- Reverse current (IR): 20 mA
- Temperature range: < +100 C
3I306G (3И306Г) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 2 mA
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 8 pF
- Forward current switching mode (IFS): 0.8 mA
- Forward current constant mode (IFC): 0.8 mA
- Reverse current (IR): 4 mA
- Temperature range: -60 to +100 C
3I306L (3И306Л) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA (9…11)
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 12 pF
- Forward current switching mode (IFS): 4 mA
- Forward current constant mode (IFC): 4 mA
- Reverse current (IR): 20 mA
- Temperature range: -60 to +100 C
3I306M (3И306М) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA (9…11)
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 30 pF
- Forward current switching mode (IFS): 4 mA
- Forward current constant mode (IFC): 4 mA
- Reverse current (IR): 20 mA
- Temperature range: -60 to +100 C
3I306M (3И306Н) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA (9…11)
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): 15..50 pF
- Forward current switching mode (IFS): 12 mA
- Forward current constant mode (IFC): 9 mA
- Reverse current (IR): 20 mA
- Temperature range: -60 to +100 C
AI301A, AI301V (АИ301А) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 2 mA
- Peak point voltage (Vp): 180 mV
- Projected peak-point voltage (Vpp): 0.65 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 12 pF
- Inductance: < 1.5 nH
- Temperature range: < +70 C
AI301B (АИ301Б) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 5 mA
- Peak point voltage (Vp): 180 mV
- Projected peak-point voltage (Vpp): 0.85 V - 1.15 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 25 pF
- Inductance: < 1.5 nH
- Temperature range: < +70 C
AI301G (АИ301Г) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA
- Peak point voltage (Vp): 180 mV
- Projected peak-point voltage (Vpp): 0.8 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 50 pF
- Inductance: < 1.5 nH
- Temperature range: < +70 C
AI402I (АИ402И) GaAs Tunnel Diode for switching applications, metal-ceramic case
- tba
AI201L Diode Ga-As Oscillator Tunnel Peak Point Current: 90...110mA ?? Peak Point Voltage: 330V ??? mV! Valley Point Terminal Capacitance: 10...40pF Differential Resistance: 2.5 Ohm Peak to Valley Current Ratio: 10
1I103A, 1I103V (1И103Б)
- Frequency, max 20 GHz
- Peak Point Current 1.3...1.7mA
- Peak Point Voltage 90mV
- Peak to Valley Current Ratio 4
- Noise Ratio 1...1.5
- Loss Resistance 7 Ohm
- Negative Differential Conductivity 17...10 MOhm
- Terminal Capacitance 0.7...1.3pF
- Case Capacitance 0.42...0.58pF
- Inductance 0.2nH
- Forward Current, DC 1.5mA
- Reverse Current, DC 1.5mA
- Forward Voltage, DC 400mV
- Reverse Voltage, DC 20mV
- Constant Power Dissipation 3mW
- Pulse Power Dissipation 100mW
GI401A
- Forward Current DC max, 0.3 mA
- Reverse Current DC, 4 mA
- Forward Voltage DC, 330 mV at IF = 0.1mA
- Reverse Voltage DC, 90 mV at IR = 1mA
- Valley Point Terminal Capacitance, Ct, 1.2…1.5 pF
- Temperature range, C -55…+70
GI103V
- Frequency, max 20GHz
- Peak Point Current 0.7 ... 1.3mA
- Peak Point Voltage 90mV
- Peak to Valley Current Ratio 4
- Noise Ratio 1 ... 1.5
- Loss Resistance 6 Ohm
- Negative Differential Conductivity 17 ... 10 MOhm
- Terminal Capacitance 0.7 ... 1.3pF
- Case Capacitance 0.42 ... 0.58pF
- Inductance 0.2nH
- Forward Current, DC 1.5mA
- Reverse Current, DC 1.5mA
- Forward Voltage, DC 50mV
- Reverse Voltage, DC 20mV
- Constant Power Dissipation 4mW
- Pulse Power Dissipation 10mW
1I103A
- Frequency, max 10 GHz
- Peak Point Current 1.3...1.7 mA
- Peak Point Voltage 90 mV
- Peak to Valley Current Ratio 4
- Noise Ratio 1...1.5
- Loss Resistance 6 Ohm
- Negative Differential Conductivity 17...10 MOhm
- Terminal Capacitance 1...2 pF
- Case Capacitance 0.42...0.58 pF
- Inductance 0.2 nH
- Forward Current, DC 1.5 mA
- Reverse Current, DC 1.5 mA
- Forward Voltage, DC 400 mV
- Reverse Voltage, DC 20 mV
- Constant Power Dissipation 5 mW
- Pulse Power Dissipation 200 mW
GI304A
- Peak current :
- T = +25 ° C, 4.5 ... 5.1 mA
- T = -40 ° C, 3.6 ... 5.61 mA
- T = 60 ° C, 4.05 ... 5.61 mA
- Voltage solution for / = 5 mA
- T = +25 ° C, > 420 mV
- T = -40 ° C, < 525 mV
- T = +60 ° C, > 336 mV
- Voltage peak maximum 65 mV
- Total capacity at the minimum of the current-voltage characteristics at f = 5 ... 20 MHz < 20 pF
- Limit operating data
- Constant forward and reverse currents : 1I304A , 1I304B : GI304A : T = -40 ... +20 ° C 10 mA, T = +60 ° C 7.5 mA
- Ambient temperature GI304A -40 ... +60 ° C.
1I404A
- Frequency Range 3 - 30GHz
- Peak Point Current 0.14 - 0.29mA
- Peak Point Voltage 90mV
- Loss Resistance 9 Ohm
- Valley Point Terminal Capacitance 0.5 - 1pF
- Case Capacitance 0.45...0.55pF
- Inductance 0.2nH
- Forward Current, DC 0.4mA
- Reverse Current, DC 2mA
- Forward Voltage, DC at IF =0.5mA 350mV
- Forward Voltage, DC at IF =0.3mA 360 - 470mV
- Reverse Voltage, DC at IR=3mA 75 - 105mV
- Constant Power Dissipation 2mW
- Pulse Power Dissipation 8mW
1I404B/V
- Frequency Range 3 - 30GHz
- Peak Point Current 0.14 - 0.29mA
- Peak Point Voltage 90mV
- Loss Resistance 7 Ohm
- Valley Point Terminal Capacitanc 1.0 - 2.0pF
- Case Capacitance 0.45...0.55pF
- Inductance 0.2nH
- Forward Current, DC 0.8mA
- Reverse Current, DC 4mA
- Forward Voltage, DC at IF =0.5mA 350mV
- Forward Voltage, DC at IF =0.3mA 360 - 470mV
- Reverse Voltage, DC at IR=3mA 75 - 105mV
- Constant Power Dissipation 5mW
- Pulse Power Dissipation 50mW
1I104A
- Frequency Range 3...15GHz
- Cutoff Frequency 11...25GHz
- Peak Point Current 1.3...1.7mA
- Peak Point Voltage 90mV
- Peak to Valley Current Ratio 4
- Loss Resistance 6 Ohm
- Valley Point Terminal Capacitance 0.8 - 1.9pF
- Case Capacitance 0.42...0.58pF
- Inductance 0.1nH
- Forward Current, DC 0.51mA
- Reverse Current, DC 1.5mA
- Forward Voltage, DC 400mV
- Reverse Voltage, DC 20mV
- Constant Power Dissipation 5mW
- Pulse Power Dissipation 200mW