User:Peter/Russian tunnel diodes
1I305B (1И305Б) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 9.6 - 10.8 mA
- Peak point voltage (Vp): 70 mV
- Projected peak-point voltage (Vpp): 0.4 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 30 pF
- Reverse current (IR): 20 mA
- Temperature range: < +100 C
3I201L (3И201Г) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 20 mA
- Peak point voltage (Vp): 210 mV
- Peak to valley current ratio (Ip/Iv): 10
- Valley point terminal capacitance (Ct): < 4 pF
- Inductance: < 1.5 nH
- Reverse current (IR): 20 mA
- Temperature range: < +100 C
3I306G (3И306Г) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 2 mA
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 8 pF
- Forward current switching mode (IFS): 0.8 mA
- Forward current constant mode (IFC): 0.8 mA
- Reverse current (IR): 4 mA
- Temperature range: -60 to +100 C
3I306L (3И306Л) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA (9…11)
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 12 pF
- Forward current switching mode (IFS): 4 mA
- Forward current constant mode (IFC): 4 mA
- Reverse current (IR): 20 mA
- Temperature range: -60 to +100 C
3I306M (3И306М) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA (9…11)
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 30 pF
- Forward current switching mode (IFS): 4 mA
- Forward current constant mode (IFC): 4 mA
- Reverse current (IR): 20 mA
- Temperature range: -60 to +100 C
3I306M (3И306Н) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA (9…11)
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): 15..50 pF
- Forward current switching mode (IFS): 12 mA
- Forward current constant mode (IFC): 9 mA
- Reverse current (IR): 20 mA
- Temperature range: -60 to +100 C
AI301A, AI301V (АИ301А) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 2 mA
- Peak point voltage (Vp): 180 mV
- Projected peak-point voltage (Vpp): 0.65 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 12 pF
- Inductance: < 1.5 nH
- Temperature range: < +70 C
AI301B (АИ301Б) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 5 mA
- Peak point voltage (Vp): 180 mV
- Projected peak-point voltage (Vpp): 0.85 V - 1.15 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 25 pF
- Inductance: < 1.5 nH
- Temperature range: < +70 C
AI301G (АИ301Г) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA
- Peak point voltage (Vp): 180 mV
- Projected peak-point voltage (Vpp): 0.8 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 50 pF
- Inductance: < 1.5 nH
- Temperature range: < +70 C
AI402I (АИ402И) GaAs Tunnel Diode for switching applications, metal-ceramic case
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AI201L Diode Ga-As Oscillator Tunnel Peak Point Current: 90...110mA ?? Peak Point Voltage: 330V ??? mV! Valley Point Terminal Capacitance: 10...40pF Differential Resistance: 2.5 Ohm Peak to Valley Current Ratio: 10
1I103A, 1I103V (1И103Б)
- Frequency, max 20 GHz
- Peak Point Current 1.3...1.7mA
- Peak Point Voltage 90mV
- Peak to Valley Current Ratio 4
- Noise Ratio 1...1.5
- Loss Resistance 7 Ohm
- Negative Differential Conductivity 17...10 MOhm
- Terminal Capacitance 0.7...1.3pF
- Case Capacitance 0.42...0.58pF
- Inductance 0.2nH
- Forward Current, DC 1.5mA
- Reverse Current, DC 1.5mA
- Forward Voltage, DC 400mV
- Reverse Voltage, DC 20mV
- Constant Power Dissipation 3mW
- Pulse Power Dissipation 100mW
GI401A
- Forward Current DC max, 0.3 mA
- Reverse Current DC, 4 mA
- Forward Voltage DC, 330 mV at IF = 0.1mA
- Reverse Voltage DC, 90 mV at IR = 1mA
- Valley Point Terminal Capacitance, Ct, 1.2…1.5 pF
- Temperature range, C -55…+70
GI103V
- Frequency, max 20GHz
- Peak Point Current 0.7 ... 1.3mA
- Peak Point Voltage 90mV
- Peak to Valley Current Ratio 4
- Noise Ratio 1 ... 1.5
- Loss Resistance 6 Ohm
- Negative Differential Conductivity 17 ... 10 MOhm
- Terminal Capacitance 0.7 ... 1.3pF
- Case Capacitance 0.42 ... 0.58pF
- Inductance 0.2nH
- Forward Current, DC 1.5mA
- Reverse Current, DC 1.5mA
- Forward Voltage, DC 50mV
- Reverse Voltage, DC 20mV
- Constant Power Dissipation 4mW
- Pulse Power Dissipation 10mW
1I103A
- Frequency, max 10 GHz
- Peak Point Current 1.3...1.7 mA
- Peak Point Voltage 90 mV
- Peak to Valley Current Ratio 4
- Noise Ratio 1...1.5
- Loss Resistance 6 Ohm
- Negative Differential Conductivity 17...10 MOhm
- Terminal Capacitance 1...2 pF
- Case Capacitance 0.42...0.58 pF
- Inductance 0.2 nH
- Forward Current, DC 1.5 mA
- Reverse Current, DC 1.5 mA
- Forward Voltage, DC 400 mV
- Reverse Voltage, DC 20 mV
- Constant Power Dissipation 5 mW
- Pulse Power Dissipation 200 mW
GI304A
- Peak current :
- T = +25 ° C, 4.5 ... 5.1 mA
- T = -40 ° C, 3.6 ... 5.61 mA
- T = 60 ° C, 4.05 ... 5.61 mA
- Voltage solution for / = 5 mA
- T = +25 ° C, > 420 mV
- T = -40 ° C, < 525 mV
- T = +60 ° C, > 336 mV
- Voltage peak maximum 65 mV
- Total capacity at the minimum of the current-voltage characteristics at f = 5 ... 20 MHz < 20 pF
- Limit operating data
- Constant forward and reverse currents : 1I304A , 1I304B : GI304A : T = -40 ... +20 ° C 10 mA, T = +60 ° C 7.5 mA
- Ambient temperature GI304A -40 ... +60 ° C.
1I404A
- Frequency Range 3 - 30GHz
- Peak Point Current 0.14 - 0.29mA
- Peak Point Voltage 90mV
- Loss Resistance 9 Ohm
- Valley Point Terminal Capacitance 0.5 - 1pF
- Case Capacitance 0.45...0.55pF
- Inductance 0.2nH
- Forward Current, DC 0.4mA
- Reverse Current, DC 2mA
- Forward Voltage, DC at IF =0.5mA 350mV
- Forward Voltage, DC at IF =0.3mA 360 - 470mV
- Reverse Voltage, DC at IR=3mA 75 - 105mV
- Constant Power Dissipation 2mW
- Pulse Power Dissipation 8mW
1I404B/V
- Frequency Range 3 - 30GHz
- Peak Point Current 0.14 - 0.29mA
- Peak Point Voltage 90mV
- Loss Resistance 7 Ohm
- Valley Point Terminal Capacitanc 1.0 - 2.0pF
- Case Capacitance 0.45...0.55pF
- Inductance 0.2nH
- Forward Current, DC 0.8mA
- Reverse Current, DC 4mA
- Forward Voltage, DC at IF =0.5mA 350mV
- Forward Voltage, DC at IF =0.3mA 360 - 470mV
- Reverse Voltage, DC at IR=3mA 75 - 105mV
- Constant Power Dissipation 5mW
- Pulse Power Dissipation 50mW
1I104A
- Frequency Range 3...15GHz
- Cutoff Frequency 11...25GHz
- Peak Point Current 1.3...1.7mA
- Peak Point Voltage 90mV
- Peak to Valley Current Ratio 4
- Loss Resistance 6 Ohm
- Valley Point Terminal Capacitance 0.8 - 1.9pF
- Case Capacitance 0.42...0.58pF
- Inductance 0.1nH
- Forward Current, DC 0.51mA
- Reverse Current, DC 1.5mA
- Forward Voltage, DC 400mV
- Reverse Voltage, DC 20mV
- Constant Power Dissipation 5mW
- Pulse Power Dissipation 200mW