User:Peter/Russian tunnel diodes
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| Type | Material | Use | Ip | Vp | Vpp | Ip / Iv | Rd | Ct | L | IFS | IFC | IR | Temp |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1I103B/1I103V (1И103Б) GI103B/GI103V (ГИ103Б) |
Ge | Amplifier | 1.3—1.7 mA | 90 mV | - | 4 | 8 Ω | T 0.7-1.3 pF C 0.42-0.58pF |
0.2 nH | ||||
| 1I304B/1I304V (1И304Б) | Ge | Switching | 4.8–5.4 mA | 56 mV | 0.4 V | 8 | < 20 pF | - | 10 mA | +100 C | |||
| 1I305B/1I305V (1И305Б) | Ge | Switching | 9.6–10.8 mA | 70 mV | 0.4 V | 8 | < 30 pF | - | 20 mA | +100 C | |||
| 1I308A (1И308А) | Ge | Switching | 4.5–5.5 mA | 85 mV | 0.43 V | 9 | 1.5–5 pF | 0.25 nH | +85 C | ||||
| 3I201L (3И201Л) | GaAs | Oscillator | 20 mA | 210 mV | - | 10 | < 4 pF | < 1.5 nH | 20 mA | +100 C | |||
| 3I306E (3И306Е) | GaAs | Switching | 1.8–2.2 mA | 170 mV | 0.85 V | 8 | 4–12 pF | - | 2.4 mA | 1.8 mA | 4 mA | +100 C | |
| 3I306G (3И306Г) | GaAs | Switching | 2 mA | 170 mV | 0.85 V | 8 | < 8 pF | - | 0.8 mA | 0.8 mA | 4 mA | +100 C | |
| 3I306J (3И306..) | GaAs | Switching | 5 mA | 170 mV | 0.85 V | 8 | < 15 pF | - | 2 mA | 2 mA | 20 mA | +100 C | |
| 3I306K (3И306К) | GaAs | Switching | 4.5–5.5 mA | 170 mV | 0.85 V | 8 | 8–25 pF | - | 6 mA | 4.5 mA | 10 mA | +100 C | |
| 3I306L (3И306Л) | GaAs | Switching | 9–11 mA | 170 mV | 0.85 V | 8 | < 12 pF | - | 4 mA | 4 mA | 20 mA | +100 C | |
| 3I306M (3И306М) | GaAs | Switching | 9–11 mA | 170 mV | 0.85 V | 8 | < 30 pF | - | 4 mA | 4 mA | 20 mA | +100 C | |
| 3I306N (3И306Н) | GaAs | Switching | 9–11 mA | 170 mV | 0.85 V | 8 | 15–50 pF | - | 12 mA | 9 mA | 20 mA | +100 C | |
| 3I306R (3И306Р) | GaAs | Switching | 4.5–5.5 mA | 170 mV | 0.85 V | 8 | 4–25 pF | - | 6 mA | 4.5 mA | 10 mA | +100 C | |
| AI201A (АИ201А) | GaAs | Oscillator | 9–11 mA | 200 mV | 10 | 8 Ω | 3.5 pF | 1.3 nH | +85 C | ||||
| AI201G (АИ201Г) | GaAs | Oscillator | 20 mA | 210 mV | 10 | 5 Ω | 4 pF | 1.3 nH | +85 C | ||||
| AI201L (АИ201Л) | GaAs | Oscillator | 10 | 10–40 pF | |||||||||
| AI301A (АИ301А) | GaAs | Switching | 2 mA | 180 mV | 0.65 V | 8 | < 12 pF | < 1.5 nH | - | +70 C | |||
| AI301B/AI301V (АИ301Б) | GaAs | Switching | 5 mA | 180 mV | 0.85–1.15 V | 8 | < 25 pF | < 1.5 nH | - | +70 C | |||
| AI301G (АИ301Г) | GaAs | Switching | 10 mA | 180 mV | 0.8 V | 8 | < 50 pF | < 1.5 nH | - | +70 C |
| Type | Material | Use | IF | IR | VF | VR | CT | Temp |
|---|---|---|---|---|---|---|---|---|
| AI402I (АИ402И) | GaAs | Back Diode | ||||||
| GI401A (ГИ401А) | Ge | Back Diode | 0.3 mA | 4 mA | 330 mV @ 0.1 mA | 90 mV @ 1 mA | 1.2–1.5 pF | -55…+70 C |
- "G", "1" = Germanium
- "A", "3" = Gallium Arsenide
- "1", "3" = Military grade
- "A", "G" = Commercial grade
- xI1xx (like AI101) are for amplifiers
- xI2xx (like AI201) are for generators
- xI3xx (like AI301, GI306) are for switching circuits or general use
- xI4xx are Backward Diodes for switching circuit and general use
1I305B (1И305Б) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 9.6 - 10.8 mA
- Peak point voltage (Vp): 70 mV
- Projected peak-point voltage (Vpp): 0.4 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 30 pF
- Reverse current (IR): 20 mA
- Temperature range: < +100 C
3I201L (3И201Г) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 20 mA
- Peak point voltage (Vp): 210 mV
- Peak to valley current ratio (Ip/Iv): 10
- Valley point terminal capacitance (Ct): < 4 pF
- Inductance: < 1.5 nH
- Reverse current (IR): 20 mA
- Temperature range: < +100 C
3I306G (3И306Г) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 2 mA
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 8 pF
- Forward current switching mode (IFS): 0.8 mA
- Forward current constant mode (IFC): 0.8 mA
- Reverse current (IR): 4 mA
- Temperature range: -60 to +100 C
3I306L (3И306Л) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA (9…11)
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 12 pF
- Forward current switching mode (IFS): 4 mA
- Forward current constant mode (IFC): 4 mA
- Reverse current (IR): 20 mA
- Temperature range: -60 to +100 C
3I306M (3И306М) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA (9…11)
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 30 pF
- Forward current switching mode (IFS): 4 mA
- Forward current constant mode (IFC): 4 mA
- Reverse current (IR): 20 mA
- Temperature range: -60 to +100 C
3I306M (3И306Н) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA (9…11)
- Peak point voltage (Vp): 170 mV
- Projected peak-point voltage (Vpp): 0.85 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): 15..50 pF
- Forward current switching mode (IFS): 12 mA
- Forward current constant mode (IFC): 9 mA
- Reverse current (IR): 20 mA
- Temperature range: -60 to +100 C
AI301A, AI301V (АИ301А) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 2 mA
- Peak point voltage (Vp): 180 mV
- Projected peak-point voltage (Vpp): 0.65 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 12 pF
- Inductance: < 1.5 nH
- Temperature range: < +70 C
AI301B (АИ301Б) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 5 mA
- Peak point voltage (Vp): 180 mV
- Projected peak-point voltage (Vpp): 0.85 V - 1.15 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 25 pF
- Inductance: < 1.5 nH
- Temperature range: < +70 C
AI301G (АИ301Г) GaAs Tunnel Diode for switching applications, metal-ceramic case
- Peak point current (Ip): 10 mA
- Peak point voltage (Vp): 180 mV
- Projected peak-point voltage (Vpp): 0.8 V
- Peak to valley current ratio (Ip/Iv): 8
- Valley point terminal capacitance (Ct): < 50 pF
- Inductance: < 1.5 nH
- Temperature range: < +70 C
AI402I (АИ402И) GaAs Tunnel Diode for switching applications, metal-ceramic case
- tba
AI201L Diode Ga-As Oscillator Tunnel Peak Point Current: 90...110mA ?? Peak Point Voltage: 330V ??? mV! Valley Point Terminal Capacitance: 10...40pF Differential Resistance: 2.5 Ohm Peak to Valley Current Ratio: 10
1I103A, 1I103V (1И103Б)
- Frequency, max 20 GHz
- Peak Point Current 1.3...1.7mA
- Peak Point Voltage 90mV
- Peak to Valley Current Ratio 4
- Noise Ratio 1...1.5
- Loss Resistance 7 Ohm
- Negative Differential Conductivity 17...10 MOhm
- Terminal Capacitance 0.7...1.3pF
- Case Capacitance 0.42...0.58pF
- Inductance 0.2nH
- Forward Current, DC 1.5mA
- Reverse Current, DC 1.5mA
- Forward Voltage, DC 400mV
- Reverse Voltage, DC 20mV
- Constant Power Dissipation 3mW
- Pulse Power Dissipation 100mW
GI401A
- Forward Current DC max, 0.3 mA
- Reverse Current DC, 4 mA
- Forward Voltage DC, 330 mV at IF = 0.1mA
- Reverse Voltage DC, 90 mV at IR = 1mA
- Valley Point Terminal Capacitance, Ct, 1.2…1.5 pF
- Temperature range, C -55…+70
GI103V
- Frequency, max 20GHz
- Peak Point Current 0.7 ... 1.3mA
- Peak Point Voltage 90mV
- Peak to Valley Current Ratio 4
- Noise Ratio 1 ... 1.5
- Loss Resistance 6 Ohm
- Negative Differential Conductivity 17 ... 10 MOhm
- Terminal Capacitance 0.7 ... 1.3pF
- Case Capacitance 0.42 ... 0.58pF
- Inductance 0.2nH
- Forward Current, DC 1.5mA
- Reverse Current, DC 1.5mA
- Forward Voltage, DC 50mV
- Reverse Voltage, DC 20mV
- Constant Power Dissipation 4mW
- Pulse Power Dissipation 10mW