Russian tunnel diodes

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This is a collection of characteristic data for Russian tunnel diodes. Most of these are available from various surplus sellers, often on ebay.

Schema of type designations:

  • Gxxxx = Germanium, Commercial grade
  • 1xxxx = Germanium, Military grade
  • Axxxx = Gallium Arsenide, Commercial grade
  • 3xxxx = Gallium Arsenide, Military grade
  • xI1xx (like AI101) are for amplifiers
  • xI2xx (like AI201) are for generators
  • xI3xx (like AI301, GI306) are for switching circuits or general use
  • xI4xx are Backward Diodes for switching circuit and general use


Mil. Type Comm. Type Material Use Ip Vp Vpp Ip / Iv Rd Ct L f IFS IFC IR Temp Data
1I103A (1И103А) GI103A (ГИ103A) Ge Amplifier 1.3—1.7 mA 90 mV - 4 6 Ω T 1-2 pF
C 0.42-0.58pF		 0.2 nH 10 GHz Data sheet (RU)
1I103B (1И103Б) GI103B (ГИ103Б) Ge Amplifier 1.3—1.7 mA 90 mV - 4 8 Ω T 0.8-1.6 pF
C 0.42-0.58pF		 0.2 nH 15 GHz Data sheet (RU)
1I103V (1И103В) GI103V (ГИ103В) Ge Amplifier 1.3—1.7 mA 90 mV - 4 8 Ω T 0.7-1.3 pF
C 0.42-0.58pF		 0.2 nH 20 GHz Data sheet (RU)
1I103G (1И103Г) GI103V (ГИ103Г) Ge Amplifier 1.3—1.7 mA 90 mV - 4 8 Ω T 1.0-3.2 pF
C 0.42-0.58pF		 0.2 nH 5 GHz Data sheet (RU)
1I104A (1И104А) Ge Amplifier 1.3—1.7 mA 90 mV - 4 6 Ω T 0.8–1.9 pF
C 0.42-0.58pF		 0.2 nH 3–15 GHz
1I304A (1И304А) GI304A (ГИ304А) Ge Switching 4.5–5.1 mA 420 mV < 20 pF +60°C
1I304B (1И304Б) GI304B (ГИ304Б) Ge Switching 4.8–5.4 mA 56 mV 0.4 V 8 < 20 pF 10 mA +100°C
1I305A (1И305А) Ge Switching 9.2–10.4 mA 70 mV 0.4 V 8 < 30 pF 20 mA +100°C
1I305B/1I305V (1И305Б) Ge Switching 9.6–10.8 mA 70 mV 0.4 V 8 < 30 pF 20 mA +100°C
1I307A (1И307А) GI307A (ГИ307А) Ge Switching 1.8–2.2 mA 65 mV 0.4 V 7 < 20 pF +100°C
1I308A (1И308А) GI308A (ГИ308А) Ge Switching 4.5–5.5 mA 70-100 mV 0.43 V 9 1.5–5 pF 0.25 nH +85°C
1I308B (1И308Б) GI308B (ГИ308Б) Ge Switching 4.5–5.5 mA 70-110 mV 5 0.7–2.0 pF +70°C
1I308V (1И308В) GI308V (ГИ308В) Ge Switching 9.0-11 mA 60-110 mV 5 4.0–10 pF +70°C
1I308G (1И308Г) GI308G (ГИ308Г) Ge Switching 9.0-11 mA 60-120 mV 5 1.5–5.0 pF +70°C
1I308D (1И308Д) GI308D (ГИ308Д) Ge Switching 9.0-11 mA 70-130 mV 5 0.8–2.0 pF +70°C
1I308E (1И308Е) GI308E (ГИ308Е) Ge Switching 18-22 mA 80-140 mV 5 3.0–15 pF +70°C
1I308J (1И308Ж) GI308J (ГИ308Ж) Ge Switching 18-22 mA 85-160 mV 5 1.0–4.0 pF +70°C
1I308I (1И308И) GI308I (ГИ308И) Ge Switching 45-55 mA 100-150 mV 5 5.0–20 pF +70°C
1I308K (1И308К) GI308K (ГИ308К) Ge Switching 45-55 mA 100-180 mV 5 2.3–8.0 pF +70°C
3I101A (3И101А) AI101A (АИ101А) GaAs Amplifier 0.75–1.25 mA 160 mV 5 24 Ω 3 pF 1.3 nH +85°C
3I101B/3I101V (3И101Б) AI101B/AI101V (АИ101Б) GaAs Amplifier 1.7–2.3 mA 160 mV 6 16 Ω < 5 pF +85°C
3I101D (3И101Д) AI101D (АИ101Д) GaAs Amplifier 1.7–2.3 mA 160 mV 5 14 Ω 2.5–10 pF 1.3 nH +85°C
3I101E (3И101Е) AI101E (АИ101Е) GaAs Amplifier 4.5–5.5 mA 180 mV 5 10 Ω 2–6 pF 1.3 nH +85°C
3I101I (3И101И) AI101I (АИ101И) GaAs Amplifier 4.5–5.5 mA 160 mV 6 7 Ω 4.5–13 pF 1.3 nH +85°C
3I201A (3И201А) AI201A (АИ201А) GaAs Oscillator 9–11 mA 200 mV 10 8 Ω 3.5 pF 1.3 nH +85°C
3I201B (3И201Б) AI201B (АИ201Б) GaAs Oscillator 9–11 mA 180 mV 10 8 Ω 2.5–6 pF 1.3 nH +100°C
3I201V (3И201В) AI201V (3И201В) GaAs Oscillator 9–11 mA 180 mV 10 8 Ω 4.5–10 pF 1.3 nH +100°C
3I201G (3И201Г) AI201G (АИ201Г) GaAs Oscillator 16–22 mA 210 mV 10 5 Ω < 4 pF 1.3 nH +85°C
3I201D (3И201Д) AI201D (АИ201Д) GaAs Oscillator 16–22 mA 200 mV 10 5 Ω < 4 pF 1.3 nH +85°C
3I201E (3И201Е) AI201D (АИ201Е) GaAs Oscillator 16–22 mA 200 mV 10 4 Ω 5–12 pF 1.3 nH +85°C
3I201SH/3I201J (3И201Ж) GaAs Oscillator 45–55 mA 260 mV 10 2.5 Ω < 15 pF < 1.3 nH +100°C
3I201K (3И201К) AI201K (АИ201К) GaAs Oscillator 90–110 mA 330 mV 10 2.2 Ω < 15 pF 1.3 nH +85°C
3I201L (3И201Л) AI201L (АИ201Л) GaAs Oscillator 90–110 mA 330 mV 10 2.2 Ω 10–40 pF 1.3 nH +85°C
AI301A (АИ301А) GaAs Switching 2 mA 180 mV 0.65 V 8 < 12 pF < 1.5 nH - +70°C
AI301B/AI301V (АИ301Б) GaAs Switching 5 mA 180 mV 0.85–1.15 V 8 < 25 pF < 1.5 nH - +70°C
AI301G (АИ301Г) GaAs Switching 10 mA 180 mV 0.8 V 8 < 50 pF < 1.5 nH - +70°C
3I306E (3И306Е) GaAs Switching 1.8–2.2 mA 170 mV 0.85 V 8 4–12 pF 2.4 mA 1.8 mA 4 mA +100°C
3I306G (3И306Г) GaAs Switching 2 mA 170 mV 0.85 V 8 < 8 pF 0.8 mA 0.8 mA 4 mA +100°C
3I306SH/3I306J (3И306Ж) GaAs Switching 5 mA 170 mV 0.85 V 8 < 15 pF 2 mA 2 mA 20 mA +100°C
3I306K (3И306К) GaAs Switching 4.5–5.5 mA 170 mV 0.85 V 8 8–25 pF 6 mA 4.5 mA 10 mA +100°C
3I306L (3И306Л) GaAs Switching 9–11 mA 170 mV 0.85 V 8 < 12 pF 4 mA 4 mA 20 mA +100°C
3I306M (3И306М) GaAs Switching 9–11 mA 170 mV 0.85 V 8 < 30 pF 4 mA 4 mA 20 mA +100°C
3I306N (3И306Н) GaAs Switching 9–11 mA 170 mV 0.85 V 8 15–50 pF 12 mA 9 mA 20 mA +100°C
3I306R (3И306Р) GaAs Switching 4.5–5.5 mA 170 mV 0.85 V 8 4–25 pF 6 mA 4.5 mA 10 mA +100°C


Mil. Type Comm. Type Material Use IF IR VF VR Rd CT Temp
1I401A (1И401А) GI401A (ГИ401А) Ge Back Diode 0.3 mA 4 mA 330 mV @ 0.1 mA 90 mV @ 1 mA 1.2–1.5 pF -55…+70 C
1I404B/1I404V (1И404Б) GI404B/GI404V (ГИ404Б) Ge Back Diode 0.8 mA 4 mA 350 mV @ 0.5 mA 75–105 mV @ 4 mA 1–2 pF
3I402B/3I402V (3И402Б) GaAs Back Diode 0.05 mA 2 mA 600 mV @ 0.4 mA 250 mV @ 4 mA 14 Ω @ 100 mA < 6 pF
3I402G (3И402Г) AI402G (АИ402Г) GaAs Back Diode 0.05 mA 2 mA 600 mV @ 0.4 mA 250 mV @ 4 mA 1.5–3.5 pF
3I402E (3И402Г) AI402E (АИ402Е) GaAs Back Diode
3I402I (3И402И) AI402I (АИ402И) GaAs Back Diode 0.05 mA 4 mA 600 mV @ 0.4 mA 250 mV @ 4 mA 14 Ω @ 100 mA < 10 pF
  • Russian Tunnel Diode 1I308G - VI Curve

    Russian Tunnel Diode 1I308G - VI Curve

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