User:Peter/1NTD

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Craig Sawyers' 1N Tunnel Diode summary data

Type Mat Ip [mA] Ip/Iv Vp [mV] C [pF] f [GHz] Notes
1N2927 Si 0.1 2.5 75 80
1N2927A Si 0.1 3.2 70 80
1N2928 Si 0.47 2.5 80 100
1N2928A Si 0.47 3.2 74 100
1N2929 Si 1.0 2.5 80 150
1N2929A Si 1.0 3.2 75 150
1N2930 Si 4.7 2.5 85 250
1N2930A Si 4.7 3.2 79 250
1N2931 Si 10 2.5 85 400
1N2931A Si 10 3.2 80 400
1N2932 Si 22 2.5 90 1200
1N2932A Si 22 3.2 82 1200
1N2933 Si 47 2.5 90 1800
1N2933A Si 47 3.2 83 1800
1N2934 Si 100 2.5 90 2500
1N2934A Si 100 3.2 85 2500
1N2939 Ge 1.0 10 65 15 2.2 Covered in GE data tab
1N2939A Ge 1.0 7.0 60 10 Covered in RCA data tab
1N2940 Ge 1.0 7.7 65 10 2.2
1N2940A Ge 1.0 4.4 65 7.0
1N2941 Ge 4.7 7.9 65 50 2.6
1N2941A Ge 4.7 4.4 65 30
1N2969 Ge 2.2 7.6 65 25 2.5
1N2969A Ge 2.2 4.5 65 15
1N3113 Ga 1.0 10 10
1N3114 Ga 2.2 10 10
1N3115 Ga 2.2 10 10
1N3116 Ga 4.7 10 15
1N3117 Ga 4.7 9.0 15
1N3118 Ga 10 10 160 20
1N3119 Ga 10 20
1N3120 Ga 22 10
1N3128 Ge 5.0 8.0 65 15
1N3129 Ge 20 8.0 90 20
1N3130 Ga 50 8.0 120 25
1N3138 Ge 50 13 260 30
1N3149 Ge 10 7.7 65 90 2.6
1N3149A Ge 10 4.4 65 50
1N3150 Ge 22 7.6 65 125 2.2
1N3217 Ge 0.47 4.7 8.0
1N3218 Ge 1.0 5.0 10
1N3218A Ge 1.0 5.0 5.0
1N3219 Ge 2.2 5.0 0
1N3219A Ge 2.2 5.0 10
1N3220 Ge 4.7 4.7 30
1N3221 Ge 10 5.0 65 100 2.6
1N3221A Ge 10 6.0 35
1N3222 Ge 22 5.1 150
1N3560 Ge 1.0 5.0 55 20 1.3
1N3561 Ge 1.0 8.0 55 20 1.3
1N3562 Ge 5.0 6.0 55 85 1.3
1N3712 Ge 1.0 5.0 65 10 2.3
1N3713 Ge 1.0 7.0 65 5.0 3.2
1N3714 Ge 2.2 4.2 65 25 2.2
1N3715 Ge 2.2 7.0 65 10 3.0
1N3716 Ge 4.7 4.0 65 50 1.8
1N3717 Ge 4.7 7.6 65 25 3.4
1N3718 Ge 10 4.1 65 90 1.6
1N3719 Ge 10 7.0 65 50
1N3720 Ge 22 4.2 65 150 1.6
1N3721 Ge 22 7.0 65 100 2.6
1N3847 Ge 5.0 6.0 25
1N3848 Ge 10 6.0 25
1N3849 Ge 20 6.0 30
1N3850 Ge 50 6.0 40
1N3851 Ge 100 6.0 40
1N3852 Ge 5.0 8.0 70 15
1N3853 Ge 10 8.0 75 15
1N3854 Ge 20 8.0 85 20
1N3855 Ge 50 8.0 105 25
1N3856 Ge 100 8.0 115 25
1N3857 Ge 5.0 8.0 70 8.0
1N3858 Ge 10 8.0 75 8.0
1N3859 Ge 20 8.0 85 10
1N3860 Ge 50 8.0 105 12
1N3948 Si 4.7 3.5 80
1N4393 Si 0.1 2.5 75 80
1N4393A Si 0.1 3.2 70 80
1N4393B Si 0.1 3.5 65 80
1N4394 Si 0.22 2.5 80 90
1N4394A Si 0.22 3.2 72 90
1N4394B Si 0.22 3.6 67 90
1N4395 Si 0.47 2.5 80 100
1N4395A Si 0.47 3.2 74 100
1N4395B Si 0.47 3.5 69 100
1N4396 Si 1.0 2.5 80 150
1N4396A Si 1.0 3.2 75 150
1N4396B Si 1.0 3.5 70 150
1N4397 Si 2.2 2.5 80 200
1N4397A Si 2.2 3.2 77 200
1N4397B Si 2.2 3.5 73 200
1N4398 Si 4.7 2.5 85 250
1N4398A Si 4.7 3.2 79 250
1N4398B Si 4.7 3.5 74 250
1N4399 Si 10 2.5 85 400
1N4399A Si 10 3.2 80 400
1N4399B Si 10 3.5 75 400

RCA data

1 MAXIMUM RATINGS (At 25C Free-air temperature)

TUNNEL DIODES

3 DC current (mA) 4 Type Mat Outline Fwd Rev Dissipation (mW) Ambient Temperature range, operating and storage (degC) Lead temperature (3 seconds maximum) 5 1N3128 Ge 1 40 70 20 -35 to 100 175 6 1N3129 Ge 1 55 85 30 -35 to 100 175 7 1N3130 Ge 1 70 100 40 -35 to 100 175 8 1N3847 Ge 1 10 15 5 -35 to 100 175 9 1N3848 Ge 1 18 25 10 -35 to 100 175 10 1N3849 Ge 1 35 50 20 -35 to 100 175 11 1N3850 Ge 1 85 125 50 -35 to 100 175 12 1N3851 Ge 1 170 250 100 -35 to 100 175 13 1N3852 Ge 1 10 15 5 -35 to 100 175 14 1N3853 Ge 1 18 25 10 -35 to 100 175 15 1N3854 Ge 1 35 50 20 -35 to 100 175 16 1N3855 Ge 1 85 125 50 -35 to 100 175 17 1N3856 Ge 1 170 250 100 -35 to 100 175 18 1N3857 Ge 1 10 15 5 -35 to 100 175 19 1N3858 Ge 1 18 25 10 -35 to 100 175 20 1N3859 Ge 1 35 50 20 -35 to 100 175 21 1N3860 Ge 1 85 125 50 -35 to 100 175 22 23

TUNNEL RECTIFIERS

25 1N3861 Ge 2 10 30 10 -35 to 100 175 26 1N3862 Ge 2 10 30 10 -35 to 100 175 27 1N3863 Ge 2 10 30 10 -35 to 100 175 28 29 30 ELECRICAL CHARACTERISTICS (At 25C Free-air temperature) 31 TUNNEL DIODES 32 tr (ps) 33 Type Ip (mA) Iv(max) (mA) Ip/Iv (min) Vp (mV) Vv(min) (mV) Vf' (mV) C(max) (pF) Rs(max) (ohms) max typ 34 1N3128 4.75 - 5.25 0.6 8 40 - 80 280 445 - 530 15 3 5000 1000 35 1N3129 19 - 21 2.4 8 50 - 110 300 475 - 575 20 2.5 2000 300 36 1N3130 4.75 - 5.25 6 8 70 - 120 350 520 - 620 25 1.5 500 160 37 1N3847 4.5 - 5.5 0.75 6 430 - 590 25 3 1800 38 1N3848 9 - 11 1.5 6 440 - 600 25 2.5 900 39 1N3849 18 - 22 3 6 460 - 620 30 2 600 40 1N3850 45 - 55 7.5 6 530 - 640 40 1.5 350 41 1N3851 90 - 110 15 6 540 - 650 40 1 125 42 1N3852 4.75 - 5.25 0.6 6 50 - 90 330 490 - 560 15 3 1200 43 1N3853 9.5 - 10.5 1.2 8 55 - 95 350 510 - 580 15 2.5 600 44 1N3854 19 - 21 2.4 8 65 - 105 365 530 - 600 20 2 400 45 1N3855 4.75 - 5.25 6 8 80 - 130 380 550 - 620 25 1.5 200 46 1N3856 95 - 105 12 8 90 - 140 390 560 - 630 25 1 75 47 1N3857 4.75 - 5.25 0.6 8 50 - 90 330 490 - 560 8 3 600 48 1N3858 9.5 - 10.5 1.2 8 55 - 95 350 510 - 580 8 2.5 300 49 1N3859 19 - 21 2.4 8 65 - 105 365 530 - 600 10 2 200 50 1N3860 4.75 - 5.25 6 8 80 - 130 380 550 - 620 12 1.5 150 51 52 53 TUNNEL RECTIFIERS 54 Type Ip (mA) C(max) (pF) VR(max) (mV) at IR=10mA VR(max) (mV) at IR=30mA Vf(min) at If=1mA 55 1N3861 0.1 - 1 6 170 400 56 1N3862 0.1 - 1 4 150 300 420 57 1N3863 0.1 - 0.5 4 150 300 435 58 59 60 MAXIMUM RATINGS (At 25C Free-air temperature) 61 TUNNEL DIODES 62 DC current (mA) 63 RCA type Development designation Mat Outline Forward Reverse Ambient Temperature range, operating and storage (degC) 64 40058 TD169 GaAs 3 0.5mA/pf 250 -30 to 85 65 40059 TD170 GaAs 3 0.5mA/pf 250 -30 to 85 66 40060 TD171 GaAs 3 0.5mA/pf 100 -30 to 85 67 40061 TD172 GaAs 3 0.5mA/pf 100 -30 to 85 68 40062 TD173 GaAs 3 0.5mA/pf 50 -30 to 85 69 40063 TD174 GaAs 3 0.5mA/pf 50 -30 to 85 70 40064 TD175 GaAs 3 0.5mA/pf 25 -30 to 85 71 40065 TD176 GaAs 3 0.5mA/pf 25 -30 to 85 72 40076 TD219 GaAs 4 0.5mA/pf 400 -30 to 85 73 40077 TD213 Ge 3 1.6 2.5 -30 to 85 74 40078 TD211 Ge 3 1.6 2.5 -30 to 85 75 76

HIGH CURRENT TUNNEL DIODES

78 79 RCA type Development designation Mat Outline Dissipation (W) Ambient Temperature range, operating and storage (degC) 80 40066 TD189 Ge 5 0.5 -55 to 85 81 40067 TD190 Ge 5 1.7 -55 to 85 82 40068 TD191 Ge 6 305 -55 to 85 83 40069 TD192 Ge 6 7 -55 to 85 84 40070 TD225 Ge 7 30 -55 to 85 85 40079 TD226 GaAs 7 50 -55 to 85 86 87 88 ELECRICAL CHARACTERISTICS (At 25C Free-air temperature) 89 TUNNEL DIODES 90 91 Vv (mV) Vf' (mV) tr (ps) 92 Type Ip (mA) Iv(max) (mA) Ip/Iv (min) Vp(max) (mV) Min Typ Min Max C(max) (pF) Rs(max) (ohms) max typ fro typ GHz 93 40058 47.5 - 52.5 12 200 500 570 1050 20 3 500 333 5 94 40059 45 - 55 10 200 450 570 1080 40 2.5 1000 667 95 40060 19 - 21 11 180 500 570 1000 15 8 1000 600 3 96 40061 18 - 22 9 180 450 530 900 30 5 2000 1250 97 40062 9.5 - 10.5 10 180 500 570 1000 10 9 1250 1000 2 98 40063 9 - 11 8 180 450 530 900 25 5 3000 2000 99 40064 4.75 - 5.25 8 170 500 550 950 8 18 2000 1250 1.2 100 40065 4.5 - 5.5 7 170 420 520 900 20 12 6000 3000 101 40076 180 - 220 15 240 600 25 0.9 8 102 40077 0.9 - 1.1 0.15 6 60 335 550 5 6 6 103 40078 0.9 - 1.1 0.18 5 60 330 400 550 10 4 104 105 106 107 HIGH CURRENT TUNNEL DIODES 108 109 Type Ip (A) Ip/Iv (min) Vp(max) (mV) Vv(min) (mV) Vf' (min) (mV) C(typ) (uF) Rs(typ) (ohms) tr(typ) (ns) Rj(typ) ohms 110 40066 0.9 - 1.1 8 125 300 490 0.002 0.055 1 0.12 111 40067 4.5 - 5.5 8 130 300 490 0.016 0.014 1.5 0.024 112 40068 9 - 11 8 130 300 490 0.045 0.007 2 0.012 113 40069 18 - 22 8 130 300 490 0.09 0.0035 2 0.006 114 40070 90 - 110 8 130 300 430 0.5 0.0006 2 0.0012 115 40079 180 - 220 10 180 550 1.25 0.0002 4 0.001 116 117 118 TUNNEL RECTIFIERS 119 MAXIMUM RATINGS (At 25C Free-air temperature) 120 121 DC current (mA) 122 RCA type Development designation Mat Outline Forward Reverse Ambient Temperature range, operating and storage (degC) 123 40054 TD177 GaAs 3 0.5mA/pf 15 -30 to 85 124 40055 TD178 GaAs 3 0.5mA/pf 15 -30 to 85 125 40056 TD216 GaAs 3 0.5mA/pf 15 -30 to 85 126 40057 TD217 GaAs 3 0.5mA/pf 15 -30 to 85 127 128 129 130 Type Ip (mA) Vf(min) at If=1mA VR(max) (mV) at IR=5mA VR(max) (mV) at IR=30mA C(max) (pF) 131 40054 1 950 200 300 6 132 40055 0.5 950 250 350 6 133 40056 1 950 160 225 6 134 40057 0.5 950 180 275 6 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162

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