2N976: Difference between revisions
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The 2N976 is a germanium PNP transistor. | The '''2N976''' is a germanium PNP transistor for low-power VHF and switching applications, manufactured by IDI. It came in a TO18 package. | ||
* Maximum collector power dissipation (Pc): | * Maximum collector power dissipation (Pc): 100 mW | ||
* Maximum collector-base voltage (Ucb): | * Maximum collector-base voltage (Ucb): 15 V | ||
* Maximum collector-emitter voltage (Uce): | * Maximum collector-emitter voltage (Uce): 10 V | ||
* Maximum emitter-base voltage (Ueb): - | * Maximum emitter-base voltage (Ueb): - | ||
* Maximum collector current (Ic max): | * Maximum collector current (Ic max): 100 mA | ||
* Maximum junction temperature (Tj): 100°C | * Maximum junction temperature (Tj): 100°C | ||
* Transition frequency (ft): | * Transition frequency (ft): 250 MHz | ||
* Collector capacitance (Cc): | * Collector capacitance (Cc): 3 pF | ||
* Forward current transfer ratio ( | * Forward current transfer ratio (h<sub>FE</sub>), min/max: 30 (min) | ||
The 2N976 is used in the [[3T77]]. | The 2N976 is used in the [[3T77]]. | ||
Revision as of 06:26, 26 June 2017
The 2N976 is a germanium PNP transistor for low-power VHF and switching applications, manufactured by IDI. It came in a TO18 package.
- Maximum collector power dissipation (Pc): 100 mW
- Maximum collector-base voltage (Ucb): 15 V
- Maximum collector-emitter voltage (Uce): 10 V
- Maximum emitter-base voltage (Ueb): -
- Maximum collector current (Ic max): 100 mA
- Maximum junction temperature (Tj): 100°C
- Transition frequency (ft): 250 MHz
- Collector capacitance (Cc): 3 pF
- Forward current transfer ratio (hFE), min/max: 30 (min)
The 2N976 is used in the 3T77.