2N700: Difference between revisions

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{{Discrete component
{{Discrete component
|Model=2N700
|Model=2N700
|Part_nos=
|Part_nos=153-505,153-506,153-507,153-508,153-512,153-513
|Description=germanium diffused-base PNP transistor
|Description=diffused-base germanium PNP transistor
|Used_in=110;4S1;N;
|Used_in=110;4S1;N;
}}  
}}  
{{Part usage}}
{{Part usage}}
==Key Specifications==
==Key Specifications==


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* I<sub>C max</sub>: 50 mA
* I<sub>C max</sub>: 50 mA
* P<sub>d</sub>: 75 mW
* P<sub>d</sub>: 75 mW
===Part numbers===
* 153-505 selected for β ≥26.5
* 153-506 selected for 21.0 ≤ β ≤ 26.5
* 153-507 selected for 13.5 ≤ β ≤ 21.0
* 153-508 selected for 10.5 ≤ β ≤ 13.5
* 153-512 selected for   8.0 ≤ β ≤ 10.2
* 153-513 selected for 10.2 ≤ β ≤ 13.0


[http://w140.com/nte160.pdf NTE160] claims to be a replacement for the 2N700.
[http://w140.com/nte160.pdf NTE160] claims to be a replacement for the 2N700.

Latest revision as of 03:51, 6 October 2024

The 2N700  (P/N 153-505,153-506,153-507,153-508,153-512,153-513) is a diffused-base germanium PNP transistor

Some instruments using part 2N700

Instrument Manufacturer Class Model Description Introduced
110 Tektronix Pulse generator 110 Pulse generator/Trigger 1960
4S1 Tektronix Plug-in 4S1 Dual channel sampling plugin 1962
N Tektronix Plug-in Type N Sampling system plug-in 1960

Key Specifications

  • ft: 280 MHz
  • fmax: 1 GHz
  • VCE max: 20V
  • IC max: 50 mA
  • Pd: 75 mW

Part numbers

  • 153-505 selected for β ≥26.5
  • 153-506 selected for 21.0 ≤ β ≤ 26.5
  • 153-507 selected for 13.5 ≤ β ≤ 21.0
  • 153-508 selected for 10.5 ≤ β ≤ 13.5
  • 153-512 selected for   8.0 ≤ β ≤ 10.2
  • 153-513 selected for 10.2 ≤ β ≤ 13.0

NTE160 claims to be a replacement for the 2N700.

Pictures